TiO2基紫外探测器的制备及退火工艺对光电性能的影响

采用磁控溅射方法,通过不同工艺的退火处理,制备了光电性能优良的TiO2基紫外探测器.通过紫外光电性能测试、扫描电子显微镜( SEM)观察及X射线衍射(XRD)分析,研究了退火工艺对探测器光电性能的影响规律.结果表明:随着退火温度的增加,TiO2晶粒尺寸显著增大,晶界和缺陷数量的变化是导致TiO2基紫外探测器的光电性能随退火工艺变化的根本原因.经500℃/2h退火后,紫外探测器的光电流高出暗电流近2.5个数量级,紫外波段的光响应高出可见光波段近2个数量级,所制备紫外探测器达到了高辐射灵敏度和可见盲特性的要求.     

Ag/TiO2/ITO紫外探测器的制备及其光电性能

采用胶体晶体模板技术,结合磁控溅射工艺,制备出光电性能较为优异的 Ag反点阵列/TiO2/ITO三明治结构紫外探测器。通过扫描电子显微镜( SEM)、XRD、四探针测试仪及半导体参数测试仪对探测器的微观结构和光电性能进行了测试与表征。结果表明：反点阵列孔径对探测器光电性能影响较为显著;随着孔径增大,探测器的暗电流逐渐增大,光电流先增大后减小,响应时间逐渐延长;孔径为4.2μm时,探测器的光电性能达到最佳;孔径较大的反点阵列电极,具有较高的电导率、较低的紫外光透过率以及较大的光生电子-空穴的复合概率。     

MSM结构ZnO紫外探测器的制备及光电性能研究

采用磁控溅射方法,在石英衬底上制备了光电性能优良的ZnO紫外探测器。通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了ZnO紫外探测器的光电特性。结果表明:探测器的光电流高出暗电流近3个数量级,紫外波段的光响应高出可见光波段近2个数量级,所制备ZnO紫外探测器达到了高辐射灵敏度和可见盲特性的要求。     

TiO2-SiO2复合薄膜亲水性能研究

采用溶胶一凝胶法,钛酸丁酯和正硅酸乙酯为前驱体,在玻璃载体上制备了具有光致亲水性能的复合型TiO2-S iO2薄膜。研究了试剂配比、试剂加入方式、凝胶时间、镀膜速度、焙烧升温速度等对薄膜性能的影响。通过对试剂配比和工艺参数的优化,提高了复合薄膜的亲水性能。     

TiO_2薄膜的制备及其光催化性能的研究

采用溶胶-凝胶法制备了TiO2薄膜,以10mg/L甲基橙为目标降解物,研究了焙烧温度、镀膜层数、紫外线光照时间对TiO2薄膜光催化性能的影响.实验结果表明,焙烧温度为500℃,镀膜层数为三层所制得TiO2薄膜光催化活性最好,并且具有稳定、持续的降解效果.     

纳米TiO2/Fe2O3复合材料的制备及其红外吸收性能研究

用溶胶-凝胶法制备了纳米TiO2／Fe2O3复合材料，并用XRD、TEM等方法对其进行了表征，给出了相关的工艺参数。研究了不同组分的纳米TiO2／Fe2O3的红外吸收特性。结果表明，纳米TiO2／Fe2O3复合材料在400cm^-1～1000cm^-1内随Fe2O3含量的增加，吸收峰明显宽化。     

PbSe薄膜的表面腐蚀改性研究

采用磁控溅射法制备Pb Se薄膜,并用配制的腐蚀液进行不同时间的表面处理,从而得到不同表面形貌的薄膜结构。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和紫外-可见分光光度计(UV-Vis)对处理后的Pb Se薄膜的表面形貌、晶体结构以及光学性能进行了表征,同时对薄膜的光电导性能进行测试。结果表明,薄膜经此工艺处理后,表面形成了一系列纳米陷光结构,并有着不同程度的氧化。不同腐蚀时间下,薄膜的光电导性能均有明显地提升,其中经3h腐蚀处理的薄膜的光电导性能提升最高。该方法无需进行后续热处理,是一种简单高效的敏化手段。     

TiO2含量对TiO2／有机硅／SiO2杂化涂层性能的影响

本文采用溶胶-凝胶法,先分别制备出TiO2溶胶和有机硅/SiO2杂化溶胶,再通过原位聚合的方法在有机硅/SiO2杂化溶胶中加入TiO2溶胶,制备出不同TiO2含量的TiO2,有机硅,SiO2杂化材料.红外光谱研究表明,杂化材料中Ti原子已接枝到了杂化网络中.对成膜后的TiO2/有机硅/SiO2杂化涂层性能进行研究,结果表明,TiO2加入量为1 wt%时涂层有较好的物理性能和耐蚀性,并且具有良好的防霉效果.     

氧化锆气凝胶的制备方法研究进展

ZrO2气凝胶以其独特性质受到人们的广泛关注,对ZrO2气凝胶的结构、性质和制备方法进行了综述,制备方法包括有机锆盐原料法(锆醇盐水解法)和无机盐原料法(滴加环氧丙烷法、无机分散溶胶-凝胶法等)。其中,滴加环氧丙烷法是制备高性能ZrO2气凝胶非常有发展潜力的方法之一。     

溶胶-凝胶法制备纳米TiO2 及粒径控制工艺

采用溶胶-凝胶法,以钛酸丁酯为前驱体,乙二醇作为螯合剂制备纳米TiO2 粒子。考察钛的乙二

醇盐的浓度、pH 值、温度等因素对TiO2 粒径的影响,并用红外光谱和SEM 对纳米TiO2 粒子进行结构和形貌表

征。结果表明,采用溶胶凝胶法可以制备出呈椭圆形且粒径分布均匀的TiO2 纳米粒子。使用硝酸铵可以有效

阻止TiO2 纳米粒子团聚。当pH 值为2 ~3、温度为20 ~40℃,钛的乙二醇盐在丙酮中的浓度为0. 03、0. 05 及

0. 07 M 时,粒径分别为150、240 及600 nm。

     

Magnetic and Optical Properties of the TiO2-Co-TiO2 Composite Films Grown by Magnetron Sputtering

The TiO2-Co-TiO2 sandwich films were successfully grown on glass and silicon substrata making alternate use of radio frequency reactive magnetron sputtering and direct current magnetron sputtering. The structures and properties of these films were identified with X-ray diffraction (XRD), Raman spectra and X-ray photoemission spectra (XPS). It is shown that the sandwich film consists of two anatase TiO2 films with an embedded Co nano-film. The fact that, when the Co nano-film thickens, varied red shifts appear in optical absorption spectra may well be explained by the quantum confinement and tunnel effects. As for magnetic properties, the saturation magnetization, remnant magnetic induction and coercivity vary with the thickness of the Co nano-films. Moreover, the Co nano-film has a critical thickness of about 8.6 nm, which makes the coercivity of the composite film reach the maximum of about 1413 Oe.     

Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films

Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from –50 ℃ to 600 ℃. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase com- ponents, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure, δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate tem- perature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases. Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to –50 ℃, and a remarkable aug- mentation of transmittance could be noticed under so low a temperature.     

飞机座舱有机玻璃透明导电膜的制备及透光和微波散射性能

研究了用溅射法在飞机座舱有机玻璃上镀制金属-介质组合透明导电膜的工艺 ;测试和分析了金膜、银膜、氧化钛膜的光学特性、导电性及形貌结构 ;按薄膜光学原理进行膜系匹计算 ,并分别镀制了 Ti O2-Au-Ti O2 、 Ti O2-Ag-Ti O2 组合透明导电膜。在 40 0～ 760 nm可见光波段内 ,透光率分别达到了 74%和 81 % ,在 8～ 1 2 GHz频段内对垂直入射的微波 ,反射率分别达到-1 .1 d B和-0 .8d B。     

Preparation and Photoluminescence of ZnO Nanostructures

Porous anodic alumina (PAA) hosts with ZnO nanoparticles loaded in were prepared by immersing PAA films in an aqueous solu-tion of zinc acetate and then annealing at high temperatures. Highly ordered ZnO nanodot arrays were produced using the method in combination of PAA template with RF magnetron sputtering deposition. The photoluminescence of the ZnO/PAA composite and the highly ordered ZnO nanodot arrays were investigated by means of a fluorescent spectrometer. The ZnO/PAA composite exhibits intense and broad photoluminescence spectra with the peak position at around 485 nm. The ZnO nanodot arrays have a strong UV light emissive peak at about 380 nm and a wide light emissive peak at 460 nm-610 nm at the room temperature.     

ITO透明导电膜的制备及性能

研究了用直流反应磁控溅射法在无机玻璃基片上制备ＩＴＯ透明导电膜的工艺;测试了膜的电阻率、对可见光的透射率及对垂直入射微波的反射率和透射率;研究了反应溅射时氧浓度、溅射后退火气氛对电阻率和透光率的影响;ＩＴＯ膜方块电阻对微波反射率和透射率的影响     

Al/Ni含能多层膜在Al2O3陶瓷/不锈钢焊接中的应用

采用磁控溅射设备,生长AuSn合金做焊料层、Al/Ni含能多层膜做热量提供层,实现了不锈钢和Al_2O_3间的异质材料自蔓延高温扩散焊。利用SEM、XRD和DSC等测试手段表征AuSn合金和Al/Ni含能多层膜的微观形貌、相成分和放热量;用万能试验机测试焊接接头的力学性能。结果表明,AuSn合金的质量比基本达到80∶20,而多层膜的层状结构清晰,反应热达到1 239 J/g。焊接实验结果表明,仅使用AuSn焊料时,剪切强度仅为46 MPa,在增加Al/Ni含能多层膜后,其剪切强度可达90 MPa,强度提高了约一倍。焊接接头的界面显微形貌和相结构研究表明,剪切强度的增强主要是Al/Ni多层膜提供了额外能量使得界面处的反应剧烈,陶瓷金属化层与中间层的反应加剧,形成了新的反应生成物。     

Preparation and Microstructure of Highly-Oriented LaNiO_3 Thin Films by RF Sputtering Method

In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 (BTO) ferroelectric thin films, highly (100)-oriented LaNiO3 (LNO) thin films of different thicknesses were deposited directly on Si (100) substrate with radio-frequency (RF) magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the micro-structures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly (100)-oriented LNO thin films were obtained at the substrate temperature of 600 ℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth.