| MSM结构ZnO紫外探测器的制备及光电性能研究 |
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| 引用本文： | 刘大博.MSM结构ZnO紫外探测器的制备及光电性能研究[J].航空材料学报,2012,32(3):63-67. |
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| 作者姓名： | 刘大博 |
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| 作者单位： | 北京航空材料研究院,北京,100095 |
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| 摘 要： | 采用磁控溅射方法,在石英衬底上制备了光电性能优良的ZnO紫外探测器。通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了ZnO紫外探测器的光电特性。结果表明:探测器的光电流高出暗电流近3个数量级,紫外波段的光响应高出可见光波段近2个数量级,所制备ZnO紫外探测器达到了高辐射灵敏度和可见盲特性的要求。
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| 关 键 词： | ZnO薄膜 紫外探测器 MSM结构 光电性能 |
Fabrication of ZnO MSM UV Detector and Its Photoelectronic Property |
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| LIU Da-bo.Fabrication of ZnO MSM UV Detector and Its Photoelectronic Property[J].Journal of Aeronautical Materials,2012,32(3):63-67. |
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| Authors: | LIU Da-bo |
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| Institution: | LIU Da-bo(Beijing Institute of Aeronautical Materials,Beijing 100095,China) |
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| Abstract: | ZnO UV detector were prepared by magnetron sputtering on quartz substrate.The photoelectronic properties of ZnO UV detector was investigated through SEM,XRD,and the detection of photoelectronic properties.It was found that the photocurrent was as much as 3 orders of magnitude greater than the darkcurrent,and the ultraviolet photoresponse was as much as 2 orders of magnitude greater than visible light photoresponse.ZnO UV detector with high sensitivity and visible blind property could be obtained. |
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| Keywords: | ZnO thin films UV detector MSM structure photoelectronic property |
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