掺磷纳米硅薄膜的微结构

采用喇曼(Raman)散射谱、高分辨率电子显微镜(HRTEM)和原子力显微镜(AFM)对掺磷纳米硅薄膜的微结构进行了分析,并对纳米硅薄膜的传导机制进行了探讨.结果表明:掺磷纳米硅薄膜由尺寸为2～4*#nm的晶粒和2～3个原子层厚的非晶界面构成,计算得到薄膜的晶态比为40%～55%.与本征纳米硅薄膜相比,掺磷纳米硅薄膜晶粒尺寸和晶态比没有明显变化,电导率却提高了2个数量级.随着掺磷浓度增加,纳米硅薄膜的晶粒尺寸、晶态比及电导率逐渐增大.AFM观察表明掺磷纳米硅薄膜由尺寸介于15～20*#nm的团簇构成,团簇排列具有带状特征.     

Preparation,Growth Mechanisms and Characterizations of ZnSe Films via the Solvothermal Method

With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate surface treatment on the quality and morpholo-gies of the ZnSe films were investigated. The growth mechanism of ZnSe films was proved to be a layer-nucleation growth process, which was tied in with the Stranski-Krastanov (SK) model. ZnSe films were identified by the X-ray diffraction pattern (XRD), the scan-ning electron microscope (SEM), the X-ray photoelectron spectroscope (XPS) and the photoluminescence (PL) techniques. The results indicate that the modified solvothermal method with diethylamine as a solvent is suitable to prepare high quality ZnSe films.     

Study on the Microstructure and Dielectric Properties of Barium Strontium Titanate Thin Films Prepared by Sol-gel Method

Sr05Ba0.5-xBixTiO3 （BST） thin films were fabricated on a Pt/SiO2/Si substrate by the sol-gel method. Then follows an investigation of the influeoces of bismuth （Bi） on the microstructures and the dielectric properties of Sr0.5Ba0.5-xBixTiO3 （BST） thin films. The microstructures of the BST thin films were examined by the XRD and the TEM techniques. Tetragonal perovskite crystal grains were observed in BST thin films. Increasing Bi^3＋ doping ration in BST will lead to decrease of the grain size. It is found that Bi^3＋ doping decreases the dielectric loss and improves the frequency dispersion of the BST thin films. Not only is compressed the peak of temperature-dependence of dielectric constant of Bi^3＋-doped BST thin films but also moves into the low-temperature region. Moreover, the average Curie tem- perature decreases gradually with the Bi^3＋ contents increasing.     

离子镀Ti(N,C)耐磨镀层成分与性能研究

 用空心阴极离子镀技术,在常用的不锈钢(1Cr18Ni9Ti)基材上,镀制Ti(N,C)耐磨镀层。对镀层的成分进行了分析,讨论了镀层成分的耐磨性,显微硬度和附着力的影响。通过对Ti(N,C)镀层与TiN和TiC镀层性能的对比,肯定了Ti(N,C)复合化合物镀层具有更优越的耐磨性和附着力。     

制备工艺对金刚石形核质量的影响

研究了制备工艺对微波等离子体ＣＶＤ金刚石成膜质量的影响。详细讨论了基片在等离子体中的位置、基片台结构、Ｎ２等离子体预处理及启动条件对金刚石成膜均匀性的影响。提出了能获得均匀金刚石膜的制备工艺程序。     

真空感应钎焊单层金刚石砂轮的实验研究

在真空条件下用Ni-Cr合金做钎料进行了钎焊单层金刚石砂轮的实验研究，实现了金刚石与钢基体间的牢固化学冶金结合。通过扫描电镜X射线能谱，结合X射线衍射结构分析，发现Ni-Cr合金中的Cr原子与金刚石表面的碳原子反应生成稳定连续的Cr3C2膜，在钢基体结合界面上生成（FexCry）C，这是实现合金层与金刚石及钢基体之间都有较高结合强度的主要因素。通过磨削实验验证了金刚石确实有较高的把持强度。     

天然金刚石刀具单激励超声椭圆振动车削

设计并制造了一种单激励夹心式纵弯复合椭圆振动车削系统.在分析超声椭圆振动切削抑制刀具崩刃机理的基础上,利用该系统进行了天然金刚石刀具振动车削铝件的试验,证实了椭圆振动切削可以有效防止刀具崩刃.     

具有纳米结构的 VO_2 相变薄膜

采用无机溶胶－凝胶法制备ＶＯ２相变薄膜，该薄膜相变时的电阻（率）突变可达４～５个数量级。并用ＸＲＤ，ＤＳＣ和ＴＧＡ法研究了制膜过程中干凝胶膜的层状非晶纳米结构。通过适当的非晶晶化过程及随后Ｖ２Ｏ５→ＶＯ２转变的真空热处理，可获得带有空洞（ｖｏｉｄ）结构的低密度纳米薄膜，从而使电阻（率）突变特性异常优异     

BH新型憎水剂及其憎水膜层“三防腐蚀”性能研究

研究了BH系列(BH 102和BH 103)憎水剂的合成工艺、技术指标、憎水处理成膜工艺以及憎水膜层的憎水效果和耐腐蚀性能。结果表明,BH系列憎水剂的憎水效果良好,在零件表面形成的憎水膜层能达到105°以上的憎水角;同时经BH系列憎水剂处理后的钢铁磷化表面的耐腐蚀性能得到明显改善,具有优良的"三防腐蚀"性能,其中含有复配缓蚀剂的BH 103憎水膜层的耐腐蚀性更优于添加单一缓蚀剂的BH 102憎水膜层。     

栅极偏压对纳米金刚石薄膜沉积过程的影响

在HFCVD系统中施加栅极偏压和衬底偏压,采用双偏压成核和栅极偏压生长的方法成功制备了高质量的纳米金刚石薄膜.采用显微Raman高分辨率SEM和AFM等现代理化分析手段分析纳米金刚石膜的微结构,结果表明双偏压显著促进了金刚石的成核密度,平均晶粒尺寸在20 nm以内.试验观察和理论分析表明栅极偏压促进了热丝附近的等离子体浓度,提高了衬底附近的碳氢基团和氢原子浓度,提高了金刚石的成核密度、在保持晶粒的纳米尺寸的同时保持了较高的成膜质量和较低的生长缺陷.