排序方式: 共有19条查询结果,搜索用时 421 毫秒
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本文提出了一种基于虚拟页地址映射的NAND Flash管理算法.该算法通过定义坏块表、对应表等结构,以及设计的坏块替换策略和虚拟页地址到实际物理页地址的转换算法,实现上层软件采用虚拟地址对NAND Flash的无坏块连续页地址访问.该算法是一种高效的地址映射算法,能高效地对数据进行索引,占用SRAM空间较少,使系统达到高性能,并使得闪存使用的更加稳定持久. 相似文献
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Vaios Lappas Nasir Adeli Lourens Visagie Juan Fernandez Theodoros Theodorou Willem Steyn Matthew Perren 《Advances in Space Research (includes Cospar's Information Bulletin, Space Research Today)》2011
CubeSail is a nano-solar sail mission based on the 3U CubeSat standard, which is currently being designed and built at the Surrey Space Centre, University of Surrey. CubeSail will have a total mass of around 3 kg and will deploy a 5 × 5 m sail in low Earth orbit. The primary aim of the mission is to demonstrate the concept of solar sailing and end-of-life de-orbiting using the sail membrane as a drag-sail. The spacecraft will have a compact 3-axis stabilised attitude control system, which uses three magnetic torquers aligned with the spacecraft principle axis as well as a novel two-dimensional translation stage separating the spacecraft bus from the sail. CubeSail’s deployment mechanism consists of four novel booms and four-quadrant sail membranes. The proposed booms are made from tape-spring blades and will deploy the sail membrane from a 2U CubeSat standard structure. This paper presents a systems level overview of the CubeSat mission, focusing on the mission orbit and de-orbiting, in addition to the deployment, attitude control and the satellite bus. 相似文献
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SRAM FPGA电离辐射效应试验研究 总被引:1,自引:0,他引:1
针对SRAM FPGA空间应用日益增多,以100万门SRAM FPGA为样品,进行了单粒子效应和电离总剂量效应辐照试验。单粒子试验结果是:试验用粒子最小LET为1.66 MeV·cm2/mg,出现SEU(单粒子翻转);LET为4.17 MeV·cm2/mg,出现SEFI(单粒子功能中断),通过重新配置,样品功能恢复正常;LET在1.66~64.8 MeV?cm2/mg范围内,未出现SEL(单粒子锁定);试验发现,随SEU数量的累积,样品功耗电流会随之增加,对样品进行重新配置,电流恢复正常。电离总剂量辐照试验结果是:辐照总剂量75 krad(Si)时,2只样品功能正常,功耗电流未见明显变化。辐照到87 krad(Si)时,样品出现功能失效。试验表明SRAM FPGA属于SEU敏感的器件,且存在SEFI。SEU和SEFI会破坏器件功能,导致系统故障。空间应用SRAM FPGA必须进行抗单粒子加固设计,推荐的加固方法是三模冗余(TMR)配合定时重新配置(Scrubbing)。关键部位如控制系统慎用SRAM FPGA。 相似文献
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单粒子锁定极端敏感器件的试验及对我国航天安全的警示 总被引:4,自引:3,他引:1
随着半导体特征工艺尺寸减小、集成度提高,静态存储器(SRAM)对单粒子锁定呈现出极其敏感的现象和趋势,为此国际航天界开展了大量的试验评估工作,剔除和杜绝了一些极端敏感器件在空间的应用.结合国内外空间应用背景,文章利用脉冲激光实验装置和重离子加速器,分别对三星公司新旧两种型号的4 M位SRAM芯片进行了单粒子锁定试验评估.试验测得两型号芯片的单粒子锁定阈值差异巨大,新型号芯片的锁定阈值低于1.5MeV·cm2/mg,而老型号芯片的锁定阈值高于39.6MeV·cm2/mg.这种对单粒子锁定极端敏感的芯片若应用于空间,将会发生0.008~0.04次/天的频繁锁定事件,极大地威胁航天器的安全和可靠.为应对这种单粒子锁定极端敏感的现象和趋势,提出了加强我国航天产品设计、元器件采购、筛选、试验等的规范、技术和条件的建议. 相似文献
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Christoph Noeldeke Maximilian Boettcher Ulrich Mohr Steffen Gaisser Mikel Alvarez Rua Jens Eickhoff Mike Leslie Matt Von Thun Sabine Klinkner Renuganth Varatharajoo 《Advances in Space Research (includes Cospar's Information Bulletin, Space Research Today)》2021,67(6):2000-2009
The radiation effects in electronic parts are called single-event effects, which are deemed to be critical for space missions. This paper presents the Single Event Upsets that were observed in an onboard memory device of the Low Earth Orbit “Flying Laptop” satellite mission during its in-orbit operation. The Single Event Upsets were carefully mapped on the satellite orbital space itself and their root causes were investigated together with their rates of occurrence. Subsequently, the events were traced to show several root cause sources such as (i) trapped energetic protons leaking to low altitudes within the South Atlantic Anomaly, (ii) Solar Energetic Particles emitted by an impulsive event on 10 September 2017, and (iii) Galactic Cosmic Rays. A profound analysis was carried out on the observed flight data, and its corresponding results are actually in agreement with the standard energetic particle models. The presented results provide another important insight on the Single Event Upsets for future Low Earth Orbit satellite missions. 相似文献
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为提升SRAM型FPGA电路块存储器和配置存储器抗单粒子翻转性能,本文提出一种脉冲屏蔽SRAM单元结构。该结构通过在标准的六管单元中加入延迟结构,增大单元对单粒子事件响应时间,实现对粒子入射产生的脉冲电流屏蔽作用。以64k SRAM作为验证电路进行单粒子翻转性能对比,电路的抗单粒子翻转阈值由采用标准六管单元的抗单粒子翻转阈值大于25 MeV·cm 2·mg -1 提升至大于45 MeV·cm 2·mg -1 ,加固单元面积较标准六管单元增大约21.3%。30万门级抗辐照FPGA电路通过脉冲屏蔽单元结合抗辐照SOI工艺实现,其抗辐照指标分别为:抗单粒子翻转阈值大于37.3 MeV·cm 2·mg -1 ,抗单粒子锁定阈值大于99.8 MeV·cm 2·mg -1 ,抗电离总剂量能力大于200 krad(Si)。 相似文献
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针对原子磁强计磁共振激励信号相位提取过程中,数据量大、实时性强、同步要求高等特点,设计了一种基于同步双口SRAM的磁共振相位信息提取系统。首先利用FPGA控制高速同步采样AD进行数据转换;然后经同步双口SRAM实现数据的高速缓存和同步读写;最后由DSP经外部中断触发定时读取缓存的数据,并进行数字锁相处理,提取相位信息。实验结果表明:该系统对频率为35~350kHz之间的正弦信号相位提取稳定度达到0.006°,满足原子磁强计静态噪声小于20pT的应用要求。 相似文献
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基于Geant4和TCAD (Technology-Computer Aided-Design)建立了一套评估静态存储器(SRAM)单粒子效应的方法. 该方法利用TCAD软件模拟半导体存储单元对粒子能量沉积的响应, 获得SRAM的重离子单粒子翻转截面, 并应用蒙特卡罗工具包Geant 4计算质子与硅材料的核反应以及次级粒子在灵敏体积内的能量沉积, 进而获得质子的单粒子翻转率. 利用该方法, 计算了TSMC 0.18 μm未加固SRAM的重离子和质子翻转率, 通过与同工艺SRAM的重离子实验结果进行比较, 初步验证了该方法的有效性. 该方法不依赖于地面模拟实验, 可以用来评估处于设计阶段的抗辐射加固器件. 相似文献