| 基于TCAD和Geant4的SRAM单粒子效应评估 |
| |
| 引用本文： | 陈善强,师立勤.基于TCAD和Geant4的SRAM单粒子效应评估[J].空间科学学报,2011,31(4). |
| |
| 作者姓名： | 陈善强 师立勤 |
| |
| 作者单位： | 1. 中国科学院空间科学与应用研究中心,北京100190 中国科学院研究生院,北京100049
2. 中国科学院空间科学与应用研究中心,北京,100190 |
| |
| 摘 要： | 基于Geant4和TCAD（Technology—Computer Aided—Design）建立了一套评估静态存储器（SRAM）单粒子效应的方法．该方法利用TCAD软件模拟半导体存储单元对粒子能量沉积的响应，获得SRAM的重离子单粒子翻转截面，并应用蒙特卡罗工具包Geant4计算质子与硅材料的核反应以及次级粒子在灵敏体积内的能量沉积，进而获得质子的单粒子翻转率．利用该方法，计算了TSMC0．18pm未加固SRAM的重离子和质子翻转率，通过与同工艺SRAM的重离子实验结果进行比较，初步验证了该方法的有效性．该方法不依赖于地面模拟实验，可以用来评估处于设计阶段的抗辐射加固器件．
|
| 关 键 词： | 单粒子效应 三维模拟 Geant 4 SRAM |
Assessing Single-event-upsets in SRAM Based on TCAD and Geant 4 |
| |
| CHEN ShanqiangSHI Liqin.Assessing Single-event-upsets in SRAM Based on TCAD and Geant 4[J].Chinese Journal of Space Science,2011,31(4). |
| |
| Authors: | CHEN ShanqiangSHI Liqin |
| |
| Institution: | CHEN Shanqiang~(1,2)SHI Liqin~1 1(Center for Space Science and Applied Research,Chinese Academy of Sciences,Beijing 100190) 2(Graduate University of Chinese Academy of Sciences,Beijing 100049) |
| |
| Abstract: | A new method based on Geant4 and Technology Computer Aided Design(TCAD)is described to assess Single Event Upsets(SEU)sensitivity of SRAMs(Static RAM)in the design phase. SRAM's response to radiation and Heavy ion induced upsets was obtained by TCAD simulation instead of ground simulation experiments.Heavy-ion simulation data are fitted by Weibull Function. Then,the energy deposition of secondary particles produced by proton-silicon nuclear reaction was calculated using Geant4 which is based on Monte Carlo ... |
| |
| Keywords: | Single Event Effect 3D simulation Geant 4 SRAM |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
