| 砷化镓异质外延薄膜的近红外光致发光研究 |
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| 引用本文： | 姜俊华,梁家昌.砷化镓异质外延薄膜的近红外光致发光研究[J].中国民航学院学报,1995,13(3):86-92. |
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| 作者姓名： | 姜俊华 梁家昌 |
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| 作者单位： | 天津轻工业学院，中国民航学院，中国科学院长春物理研究所，中国民航学院基础部 |
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| 基金项目： | 中国科学院长春物理研究所激发态物理开放实验室基金 |
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| 摘 要： | 本文通过在硅衬底上用ＭＯＣＶＤ方法生长的砷化镓外延薄膜的变激发强度的近红外光致发光，研究了在液氮温度下峰值为１．１３与１．０４ｅＶ两个发光带的发光特性。
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| 关 键 词： | 外延薄膜 近红外 光致发光 能级结构 砷化镓 |
Studies on the Near Infrared Photoluminescence of Heteroepitaxial GaAs |
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| Jiang Junhua.Studies on the Near Infrared Photoluminescence of Heteroepitaxial GaAs[J].Journal of Civil Aviation University of China,1995,13(3):86-92. |
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| Authors: | Jiang Junhua |
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| Abstract: | This paper presents the result of the studies on the near infraredphotoluminescence characteristics of the two emission bands with peak energies 1. 13 and1.04 eV,emitted by the GaAs epilayers grown by MOCVD on Si substrates under variousexcitation intensities at nitrogen-liquid temperature. It shows that these two emissionbands belong to the photoluminescence of donor-accepter pair recombination. The experimental results show that the Franck-Condon shift should be taken into account becauseof the strong electron-phonon coupling, and a new expression for the energy ofrecombination of donor-acceptor pairs has been obtained. Finally, the structures of the energy levels of these two donor-acceptor pairs with peak energies 1.13 and 1.04 eV havebeen determined respectively in terms of the simulations between the experimental curvesand the theoretical expressions. |
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| Keywords: | epilayer of GaAs near infrared photoluminescence the structures of energy levels of donor-acceptor pairs a new equation for the transition energy |
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