GaInP_2外延薄膜的成份调制与超结构间的关联

用自制的具有极高分辨率的微机控制的三晶体x-射线衍射仪测量了用MOCVD方法生长的Ga_(0.52)In(0.48)P外延薄膜的超结构。我们发现,在Ga_(0.52)In(0.48)P外延薄膜内由In平面和Ga平面交替组成的(?)平面中,存在着交替的In丰与Ga丰平面。对此,我们定义了有序因子,并首先精确地测定了有序因子值。由此导出了成份调制的表达式。这样,我们就可用成份调制表示式来表达GaInP_2外延薄膜中存在的部分有序相的超结构特征。

Correlation between Compositional Modulation and Superstructure in GaInP_2 Epilayer

By using a high resolution computer-controlled triple-crystal x-ray di- ffractometer, the superstructure of the Ga_(0.52)In_(0.48)P thin epilayer grown by MOCVD is ob- served. On (?)planes alternatively composed of In-and Ga-planes in Ga(0.52)In(0.48)P epilay- er, there exist alternatively In-rich and Ga-rich planes. The ordering factor on the In-rich and Ga-rich planes is defined and its value first measured precisely. The expression of the compositional modulation, induced by the superstructure of Ga(0.52)In(0.48)P epilayer, is de- rived. Therefore, the superstructure characteristics in the partial ordering phase of Ga(0.52)In(0.48)P epilayer can be formulated by the expression of the compositional modulation.