| 氮化硅的氧化机制研究 |
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| 引用本文： | 陈思员, 姜贵庆, 俞继军, 欧东斌.氮化硅的氧化机制研究[J].宇航材料工艺,2010,40(1). |
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| 作者姓名： | 陈思员 姜贵庆 俞继军 欧东斌 |
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| 作者单位： | 中国航天空气动力技术研究院,北京,100074 |
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| 摘 要： | 研究了氮化硅的氧化机制以及被动氧化至主动氧化的转捩温度,并结合试验结果做了分析。结果表明氮化硅在高温下极易炸裂,在被动氧化机制下生成氮气和SiO2薄膜,转捩温度和碳化硅材料基本一致。
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| 关 键 词： | 抗氧化 氮化硅 转捩温度 |
Oxidation Mechanism Study of Silicon Nitride |
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| Chen Siyuan,Jiang Guiqing,Yu Jijun,Ou Dongbin.Oxidation Mechanism Study of Silicon Nitride[J].Aerospace Materials & Technology,2010,40(1). |
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| Authors: | Chen Siyuan Jiang Guiqing Yu Jijun Ou Dongbin |
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| Abstract: | The oxidation mechanism and transition temperature of silicon nitride were studied. The results indicate that the silicon nitride burst easily at high temperature, the silicon dioxide film and the nitrogen generate under passive oxi-dation mechanism. The results also indicate that silicon nitride and silicon carbide have the same transition temperature. |
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| Keywords: | Oxidation mechanism Silicon nitride Transition temperature |
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