| 功率MOSFET测试仪的设计 |
| |
| 引用本文： | 张建芳,刘连生.功率MOSFET测试仪的设计[J].中国民航学院学报,2009,27(1):51-54. |
| |
| 作者姓名： | 张建芳 刘连生 |
| |
| 作者单位： | 中国民航大学基础实验中心,天津,300300
|
| |
| 基金项目： | 中国民用航空局科技项目 |
| |
| 摘 要： | 介绍了以单片机为核心的功率MOSFET测试仪的原理、系统结构及具体的软硬件设计。将脉冲功率法引入功率MOSFET跨导和沟道电阻的测试，很好地解决了大电流偏置下参数测试的散热问题。所设计的功率MOSFET测试仪可以进行功率MOSFET的耐压、沟道电阻、开启电压、跨导及输入结电容几个参数的精确测量，并已实用化。
|
| 关 键 词： | 单片机 脉冲功率法 MOSFET 测试仪 |
Design of Test Apparatus of Power MOSFET |
| |
| ZHANG Jian-fang,LIU Lian-sheng.Design of Test Apparatus of Power MOSFET[J].Journal of Civil Aviation University of China,2009,27(1):51-54. |
| |
| Authors: | ZHANG Jian-fang LIU Lian-sheng |
| |
| Institution: | (Basic Experiment Center, CA UC, Tianjin 300300, China) |
| |
| Abstract: | In this paper, the principle, system stucture and the design of both hardware and software of a kind of power MOSFET the meaning of the test apparatus are introduced, which is based upon MCU. The pulse power method is applied in the forward transconductance and static drain-source on resistance testing of power MOSFET, which could solve the overheat problem of parameters testing under great bias current well. This test apparatus is able to measure the drain-source breakdown voltage, static drain-source on resistance, gate threshold voltage, forward transconductance and input capacitance of power MOSFET accurately, which has been applied in practice. |
| |
| Keywords: | MOSFET |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
