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MENG Xiang-ti HUANG Qian WANG Ji lin CHEN Pei-yi TSIEN Pei-hsin 《中国航空学报》2006,19(B12):192-197
The changes of DC characteristics of SiGe HBT after being submitted to γ-ray irradiation of 700 krad, 7 000 krad and 10 000 krad were compared to those of Si BJT. Generally speaking, Ib and Ib- Ib0 increase with the doses increasing. For SiGe HBT, with the doses increasing, Ic and Ic-Ic0 as well as the related changes of the current gain (β) will decrease at higher Vbe, while for Si BJT, with the doses increasing, after irradiation, Ib and Ic-Ic0 increase; ,8 and its related changes also decrease with their differences, however, tending to be very small at high doses of 7 000 krad and 10 000 krad. Moreover, given the same doses, the decreases of,a are much larger than SiGe HBT, which shows that SiGe HBT's anti-radiation performance proves to be better than Si BJT. Still, in SiGe HBT, some strange phenomena were observed: Ic-Ic0 will increase after the radiation of 7 000 krad in less than 0.65 V and as will ,8 in less than 0.75 V. The mechanism of radiation-induced change in DC characteristies was also discussed. 相似文献
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单点金刚石车削单晶锗端面时,其表面可能呈现明暗扇形区域相间分布的现象,该现象的出现与工艺参数密切相关。通过分析材料特性对脆塑转变临界未变形切屑厚度的影响,指出明暗扇形现象出现的可能原因。结合正交实验,研究了主轴转速、切削深度、进给量对单晶锗表面明暗区域扇形分布的影响。将实验结果进行极差分析,分析各工艺参数对工件表面质量的影响规律,为下一步研究提供了参考。 相似文献
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大尺寸及异型锗窗高效电火花线切割技术 总被引:1,自引:1,他引:0
研究了N型锗半导体电火花加工时所体现的单向导通性及特殊电特性,建立了电火花加工模型,分别用二极管、可变电阻、稳压管、电阻等器件表征了锗半导体与进电端材料的接触势垒、极间体电阻、介质放电维持电压及工作液电阻。设计了锗半导体电火花线切割专用夹具,采用锗半导体表面涂覆碳浆并用石墨块进电的方式以降低接触势垒、接触电阻,对进电接触点采用吹气方式减少电化学反应导致的不导电钝化膜的产生,保障加工的延续。最后对电阻率为22.3 Ω·cm,高度为170 mm的N型锗进行了电火花线切割,切割效率大于100 mm2/min,并采用数控的方法切割出异型锗窗。检测了放电波形,分析了锗半导体电火花线切割的特性。 相似文献
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为了研究微纳米尺度下单晶锗的力学特性,采用纳米压痕仪对单晶锗(100)(110)和(111)晶面进行了纳米压痕实验,并通过原子力显微镜对材料表面进行了观测。根据单晶锗各晶面的位移-载荷曲线,对单晶锗各晶面的弹性回复率、硬度、弹性模量与压入深度之间的关系进行了分析。结果表明:单晶锗在加载过程中分别经历了弹性变形、塑性变形和脆性变形三个阶段。当压入深度超过500 nm时,加载曲线上有突进点产生;当压入深度超过100 nm时,卸载曲线上有突退点产生。单晶锗的残余压痕形貌表现为凸起状,表明单晶锗具有较低的加工硬化趋势。当压入深度达到100 nm时,单晶锗表现出明显的尺寸效应,且单晶锗(111)晶面具有最低硬度和弹性模量值。表明相对于其他两个晶面,单晶锗(111)晶面具有更好的塑性变形能力。 相似文献
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