多弧离子镀Cr/Cr2O3薄膜红外及可见光谱特性

采用多弧离子镀制备了具有不同色彩的Cr/Cr2O3薄膜,利用紫外-可见光分光光度计研究了薄膜在可见和红外波段的光谱特性,利用SEM进行薄膜表面结构和形貌的分析,利用四探针测阻仪测试了样品的方块电阻,利用红外发射率测量仪测试了样品的红外发射率。结果表明:Cr/Cr2O3薄膜具有丰富的色彩,在可见光区有明显的反射峰,可见光区光谱特性主要受膜厚的影响,方块电阻随膜厚增加而有变大,样品的红外发射率主要取决于金属层,平均红外发射率最小降至0.371。     

红外可见兼容隐身薄膜的制备与性能

采用多弧离子镀制备了多彩Al/TiNO(掺氮TiO2)薄膜,利用SEM观察了薄膜的表面、断面形貌,并测量了其膜厚.采用XRD研究了薄膜的相结构.利用紫外一可见分光光度计研究了TiNO膜的可见光谱特性,用红外比辐射率测量仪测量了样品的红外发射率.结果表明:在不改变Al箔在8～14 um波段低红外发射率的情况下,实现了其物理着色.所得薄膜为锐钛矿型TiO2结构,薄膜表面平整、致密,结合力较好.TiNO薄膜呈明显柱状生长,薄膜试样表面未出现明显缺陷,薄膜表面致密,柱状颗粒生长完好.TiNO薄膜的沉积速率达120 nm/min.     

低红外发射率迷彩填料的制备及光谱特性

采用化学液相沉淀法获得了具有核层结构的 Al/ SiO2/Fe2O3颜料,在基本不改变Al粉在8～14靘波段红外发射率的情况下,实现了片状Al粉的物理着色.分析了正硅酸乙酯(TEOS)水解一缩聚反应及氯化铁水解反应机理,并以此制备了Al/SiO2/Fe2O3三层结构的复合粒子,研究了包覆的工艺条件.通过扫描电镜、能谱、X射线衍射、紫外-可见光吸收谱等方法对包膜后的片状Al粉粒子进行了分析与表征.实验结果表明,通过液相沉积法在Al粉表面成功包覆了SiO2/Fe2O3薄膜,得到了低红外发射率的迷彩Al粉颜料.     

低发射率薄膜的红外隐身特性研究

利用磁控溅射法制备了氧化铟锡（ITO）、掺铝氧化锌（ZAO）、TiO2/Ag/TiO2纳米多层等三种透明的低发射率薄膜。研究了这些低发射率薄膜以及降低材料红外发射率对降低红外辐射强度和红外隐身所起的作用。结果表明：降低红外发射率可以有效地抑制由于温度升高所带来的附加红外辐射;低红外发射率薄膜在红外隐身中有潜在应用价值。     

导电高分子电致变色智能热控器件

采用简单的旋涂、喷涂等方法,制备了一种由可溶性聚苯胺为主体电致变色智能热控器件.该器件的基底为聚酯,固体电解质为锂盐/聚丙烯腈.通过电切换调控,该器件发射率能够在0.46-0.75内调控,且红外光谱反射率变化大于38%.研究了厚度、预掺杂酸种类、浓度等对聚苯胺活性层发射特性的影响;考察了导电高分子聚苯胺层厚度、电切换电压等因素对涂层体系发射率调控的影响.结果表明发射率的调控范围与电化学还原的深度密切相关,通过调节材料厚度、掺杂酸种类等可有效提高发射率调控范围.该导电高分子电致变色智能热控涂层在航天器热控制方面展示了良好的应用前景.     

离子镀TiN涂层的组织结构及性能研究

采用多弧离子镀的方法在成都威特电喷公司柱塞零件表面沉积TiN膜层。试采用合适的工艺，TiN膜层具有较高的硬度和膜一基结合力和耐磨性，制备的膜层连续、光滑、组织致密、膜层厚度均匀。膜层的相结构中为单一的TiN相结构。     

离子辅助沉积Al膜层增强Ti811钛合金高温微动疲劳抗力

为提高Ti811钛合金高温微动疲劳抗力,利用离子辅助沉积技术在Ti811钛合金表面制备Al膜层。对比研究多弧离子镀(MIP)和离子辅助多弧沉积(IAD)Al膜层的膜基界面成分分布、膜基结合强度、显微硬度、摩擦学性能。探讨IAD铝膜层对Ti811合金微动疲劳抗力的影响。结果表明,利用离子辅助多弧沉积技术可以获得膜基结合强度高、硬度低、减摩润滑性能好的Al膜层,该膜层能够显著提高Ti811钛合金350℃时的微动疲劳抗力。     

可用于红外隐身的纳米石墨薄膜热辐射调制器的研究

碳材料以重量轻、比表面积大、机械强度高、导电性好等特性在隐身技术领域有巨大的应用潜力。本文基于化学气相沉积方法，通过优化生长温度、降温速率和氢气流量制备出厚度为500～700nm、表面褶皱且具有高结晶度的石墨薄膜。进一步通过构建夹层结构的中红外热辐射调制器，研究了离子插入对纳米石墨薄膜红外热辐射性能的影响，发现在0～4V电压调控范围，通过电控制离子液体插入，石墨薄膜的红外发射率可以从0.38降低到0.06，且红外发射率调谐性能可逆。这种纳米石墨薄膜可以作为一种新型的智能热表面材料，用于复杂背景下的动态热伪装或红外隐身，同时其发射率可动态调谐的性能使其在辐射冷却、个人热管理和红外通信等方面也有巨大的潜在应用价值。     

低发射率涂层材料研究

测试了多种黏合剂和粉体及以聚氨酯树脂为黏合剂制成的涂膜在8～14 μm波段的发射率.结果表明,Karton树脂红外透明性好,具有较低的红外发射率;铝粉制成涂膜后发射率较低,且涂膜的发射率与铝粉的加入量、粒径等有关;掺锡氧化铟(ITO)薄膜具有很低的发射率,其发射率与ITO膜的厚度、含氧量等有关.     

特种材料表面镀TiN薄膜的结构与应力研究

本文采用多弧离子镀技术在特种材料表面制备TiN薄膜。利用扫描电镜和X射线衍射仪对TiN薄膜的形貌、成分结构、残余应力进行研究,结果表明：薄膜表面粗糙度较大;薄膜由TiN单相组成,以（111）晶面为主;TiN薄膜存在较大残余压应力,经过保温热处理后,薄膜的残余应力显著下降。     

Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the heli-con wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared ab-sorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmis-sion electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.     

TiN膜离子注入与沉积工艺研究

采用离子注入、沉积、动态混合注入沉积工艺,在硅基体上制备TiN膜层.用纳米划痕法检测成膜质量,用扫描电镜观察划痕形貌.对比分析结果表明,动态混合离子注入沉积工艺对提高膜层与基体的结合性能效果显著.     

Photoluminescence Properties of Nanocrystalline 3C-SiC Films

Nanocrystalline (nc) 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposi-tion (HW-PECVD) technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence (PL) character-istics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wave-length, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the ap-pearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films.     

纳米Al2O3添加对ZrO2涂层显微结构与性能的影响

以纳米Al2O3,和ZrO2为原料,利用大气等离子喷涂技术(APS)沉积了ZrO2,ZrO2-15%Al2O3,(体积分数,下同)和ZrO2-30%Al2O3三种涂层.运用FESEM,SEM,TEM,XRD和Raman Spectroscopy等分析技术对涂层相组成、显微结构进行了确定.测定了涂层的结合强度、显微硬度等性能.结果表明:Al2O3添加并不改变ZrO2涂层主晶相组成,但主晶相拉曼峰明显展宽.Al2O3颗粒以非晶形式存在于ZrO2颗粒间,有利于ZrO2涂层的增强增韧性能.ZrO2涂层中可观测到团簇颗粒与层状结构组成的双模结构.ZrO2涂层的沉积效率、结合强度与显微硬度可明显提高,有利于ZrO2涂层使用寿命与抗摩擦性能的改善.     

离子束辅助沉积WS_2-Ti-Ag复合薄膜的摩擦性能

采用ZDH-100型号离子束复合沉积设备沉积WS_2-Ti-Ag复合薄膜,基材为轴承钢和单晶硅(100).采用场发射扫描电子显微镜、XRD衍射仪,检测复合薄膜的表面形貌、微观结构.采用球-盘式摩擦磨损试验机,对复合薄膜在大气环境中的摩擦性能进行了研究.结果表明:采用离子束辅助沉积技术制备的WS_2-Ti-Ag复合薄膜是非晶态薄膜;并且随法向载荷的增加,复合薄膜的摩擦因数减小,摩擦状态越稳定,耐磨寿命越短.     

复合推进剂无烟化的实验研究

本文从实验上研究了一系列复合推进剂在燃烧室内点火所产生的燃气对激光、红外、可见光及微波等信号产生的衰减;对实验结果进行了理论分析和解释,找出了复合推进剂中AP粒度、含量、级配比、Al粉粒度、含量及燃烧室压力等诸因素对衰减大小的影响规律;同时也给出了对信号衰减较小的AP粒度级配范围,为复合推进剂无烟化的研究提供了参考依据.     

光学滤光片薄膜边缘应力研究

以光学滤光片薄膜边缘应力作为对象,研究了Ge/Zn S单、多层光学薄膜应力的变化规律。通过实验研究了离子束轰击能量以及真空退火温度等因素对Ge/Zn S光学薄膜应力类型、大小、变化及其分布的影响规律。Zn S薄膜的应力为压应力,采用离子束辅助工艺后薄膜边缘应力变得均匀;真空退火使Zn S薄膜的应力减小为原来的一半。通过优化沉积参数和张应力、压应力薄膜的组合降低了Ge/Zn S多层光学薄膜的应力,结果表明其平均应力分别为0.1 MPa,而且处于压应力状态。     

Preparation,Growth Mechanisms and Characterizations of ZnSe Films via the Solvothermal Method

With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate surface treatment on the quality and morpholo-gies of the ZnSe films were investigated. The growth mechanism of ZnSe films was proved to be a layer-nucleation growth process, which was tied in with the Stranski-Krastanov (SK) model. ZnSe films were identified by the X-ray diffraction pattern (XRD), the scan-ning electron microscope (SEM), the X-ray photoelectron spectroscope (XPS) and the photoluminescence (PL) techniques. The results indicate that the modified solvothermal method with diethylamine as a solvent is suitable to prepare high quality ZnSe films.     

Kinetic Monte Carlo Simulation of EB-PVD Film:Effects of Substrate Temperature

The 2D kinetic Monte Carlo (KMC) simulation was used to study the effects of different substrate temperatures on the microstruc-ture of Ni-Cr films in the process of deposition by the electron beam physical vapor deposition (EB-PVD). In the KMC model, substrate was assumed to be a “surface” of tight-packed rows, and the simulation includes two phenomena: adatom-surface collision and adatom diffusion. While the interaction between atoms was described by the embedded atom method, the jumping energy was calculated by the molecular static (MS) calculation. The initial location of the adatom was defined by the Momentum Scheme. The results reveal that there exists a critical substrate temperature which means that the lowest packing density and the highest surface roughness structure will be achieved when the temperature is lower than the smaller critical value, while the roughness of both surfaces and the void contents keep decreasing with the substrate temperature increasing until it reaches the higher critical value. The results also indicate that the critical substrate temperature rises as the deposition rate increases.