0.13μm部分耗尽SOI工艺反相器链SET脉宽传播

基于0.13 μm部分耗尽绝缘体上硅（PD-SOI）工艺,设计了一款片上反相器链（DFF）单粒子瞬态（SET）脉宽测试电路并流片实现,SET脉宽测试范围为105~3 150 ps,精度为±52.5 ps。利用重离子加速器和脉冲激光模拟单粒子效应试验装置对器件进行了SET脉宽试验。采用线性能量传输（LET值）为37.6 MeV·cm2/mg的86Kr离子触发了反相器链的三级脉宽传播,利用脉冲激光正面测试器件触发了相同级数的脉宽,同时,激光能量值为5 500 pJ时触发了反相器链的双极放大效应,脉宽展宽32.4%。通过对比激光与重离子的试验结果,以及明确激光到达有源区的有效能量的影响因子,建立了激光有效能量与重离子LET值的对应关系,分析了两者对应关系偏差的原因。研究结果可为其他种类芯片单粒子效应试验建立激光有效能量与重离子LET值的对应关系提供参考。      

CMOS器件单粒子效应电荷收集机理

针对90 nm CMOS（Complementary Metal Oxide Semiconductor）工艺,采用三维数值模拟方法,研究了反相器中NMOS（Negative channel-Metal-Oxide-Semiconductor）晶体管与PMOS（Positive channel-Metal-Oxide-Semiconductor）晶体管的单粒子瞬变（SET,Single Event Transient）电流脉冲,深入分析了PMOSFET（Positive channel-Metal-Oxide-Semiconductor Field-Effect Transistor）与NMOSFET（Negative channel-Metal-Oxide-Semiconductor Field-Effect Transistor）发生单粒子效应时电荷输运过程和电荷收集机理.研究结果表明,由于电路耦合作用,反相器中晶体管的电荷收集与单个晶体管差异显著;反相器中PMOS晶体管电荷收集过程中存在寄生双极放大效应,NMOS晶体管中不存在寄生双极放大效应;由于双极放大效应,90 nm工艺下PMOS晶体管产生的SET电压脉冲比NMOS晶体管产生的电压脉冲持续时间更长,进而导致PMOS晶体管的SET效应更加敏感.研究结果为数字电路SET的精确建模、进行大规模集成电路SET效应模拟提供了参考依据.      

脉冲激光诱发130nm体硅CMOS器件的单粒子闩锁效应

基于130nm体硅CMOS工艺，设计了具有不同阱/衬底接触与MOS管有源区间距、NMOS有源区与PMOS有源区间距的反相器链，利用脉冲激光试验开展了不同设计和不同工作电压下CMOS电路的单粒子闩锁效应敏感性研究.结果表明，随着阱/衬底接触与MOS管有源区的间距减小，以及NMOS与PMOS有源区间距的增大，电路抗SEL效应能力增强.此外，不同工作电压下电路的SEL效应规律表明，电压越大，反相器电路的SEL电流越大，且随着阱/衬底接触与MOS管有源区间距的减小以及NMOS与PMOS有源区间距的增大，电路出现SEL效应的开启电压增大.结合CMOS中寄生结构和单粒子闩锁效应触发机制，分析了相关因素影响电路单粒子闩锁效应敏感性的内在机制.      

脉冲激光模拟空间载荷单粒子效应研究进展

脉冲激光作为模拟测试空间探测载荷半导体器件的单粒子效应现象的一种较新型手段,具有可以定位器件对单粒子效应敏感的具体单元以及动态测试电路系统对单粒子效应的时间响应特性的特点,能够满足工程部门、器件研发部门的不同需求。通过实验与理论研究,建立单粒子锁定与翻转效应的激光阈值能量与重离子LET值的对应关系,解决了脉冲激光模拟测试的激光结果如何定量的关键问题,据此可以定量摸底评估器件的单粒子效应敏感度,使脉冲激光测试载荷的结果更具评价以及指导意义,这对建立统一的脉冲激光单粒子效应评估试验标准以及对脉冲激光试验的推广具有重要意义。空间探测载荷发生单粒子效应后器件功能特性及电路系统的影响、防范单粒子效应电路条件影响的手段下电路系统的抗单粒子效应设计措施是的有效性,以及为空间探测专门研制的抗辐射ASIC电路评价,都需要更加精细的单粒子效应测试方法。通过建立便捷、低成本的脉冲激光定量试验的手段,解决了空间探测载荷上述单粒子效应试验的问题。     

Flash芯片电流“尖峰”现象的脉冲激光试验

利用皮秒脉冲激光单粒子效应试验装置研究了一款宇航级Flash芯片的电流“尖峰”（HCS）现象。利用激光准确定位的特点，确定电流“尖峰”是由芯片的电荷泵单元充放电引起的，不同的激光能量、入射位置会触发不同频率、相同幅值的电流“尖峰”现象，虽然电流“尖峰”发生的瞬间电流增大的现象与单粒子锁定效应表现一致，但机理完全不同。当激光能量足够高（对应于重离子LET值99.8 MeV·cm2/mg）时，在电荷泵的同一个敏感位置累积多次辐照不断触发芯片发生电流“尖峰”，芯片会因多次充放电而损坏。      

空间高能粒子与器件布线层核反应后次级粒子LET分布研究

空间高能质子和重离子是导致元器件发生单粒子效应的根本原因,为准确评估元器件在轨遭遇的单粒子效应风险,必须清楚高能质子、重离子与器件材料发生核反应的物理过程及生成的次级重离子LET（Line EnergyTransfer）分布规律。针对典型CMOS工艺器件模拟计算了不同能量质子和氦核粒子在器件灵敏单元内产生的反冲核、平均能量及线性能量转移值,并分析了半导体器件金属布线层中重金属对次级重离子LET分布的影响规律。计算结果表明：高能粒子与器件相互作用后产生大量次级重离子,且高能质子作用后产生的次级粒子的LET值主要分布为0～25MeV·cm²/mg;高能氦核粒子作用后产生的次级粒子的LET值主要分布为0～35 MeV·cm²/mg;有重金属钨（W）存在时能提高次级粒子的LET值,增加了半导体器件发生单粒子效应的概率,该研究结果可为元器件单粒子效应风险分析、航天器抗单粒子效应指标确定提供重要依据。     

运算放大器SET效应的试验研究

模拟器件的单粒子瞬态脉冲效应的研究, 成为近来国际上单粒子效应研究的热点. 针对中国生产的运算放大器SF3503, 利用脉冲激光单粒子效应测试装置, 试验研究了SF3503工作于反相放大器与电压比较器模式SET效应的特征与规律. 获取了器件的敏感节点分布、LET阈值和SET脉冲波形的特征参数, 其中器件的敏感节点均分布在输入级与放大级, LET阈值不大于1.2 MeV•cm2•mg-1, 电压比较器产生的最大SET脉冲的幅度达27 V、脉冲宽度为51μs. 试验表明SF3503对SET效应极其敏感, 在不采取任何措施的情况下, 在空间任务中直接使用, 会严重影响系统的可靠性.      

运算放大器单粒子瞬态脉冲效应试验评估及防护设计

线性器件的单粒子瞬态脉冲效应（SET）具有瞬发性和传播性，其对星用电子系统和设备的在轨故障定位及防护设计造成较大困难，已成为威胁航天器可靠性的重要因素之一.星用电子设备需要对所采用线性器件的SET特征进行细致的试验评估，以确定其最坏情况，并在此基础上结合具体应用电路特点进行有针对性的滤波等防护设计.本文以典型的星用线性器件LM124运算放大器作为研究对象，利用脉冲激光对其SET特征进行试验评估，得到宽度为35μs、幅度为7.2V的最坏情况SET参数.利用Hspice仿真验证LM124的SET特性与规律，针对最坏情况SET，仿真设计了外围滤波电路，研究不同减缓电路参数对SET脉冲的抑制效果，确定出最优电路参数.再次利用脉冲激光试验检验滤波电路对最坏情况SET的减缓效果，结果表明采用最优参数设计的滤波电路对最坏情况SET有较好的抑制作用，能够满足通常的应用电路需求.      

星用大容量静态存储器多位翻转实验研究

给出典型大容量静态存储器(SRAM)的多位翻转实验研究 结果。用HI-13串列型静电加速器和兰州重离子加速器(HIRFL)加速的重离子轰击样品,用 一套基于 网络协议的高分辨率SRAM单粒子效应检测系统检测发生的多位翻转。实验结果表明多位翻转 可以由多种机制产生：在两种Hitachi SRAM中检测到的同一字节多位翻转(SMU)是由单个离 子产生的电荷被相邻敏感节点共享所致;当IDT71256中写入测试图形“00”时,其外围电路 中产生的单粒子瞬时脉冲(SET)引起多达8位的SMU;离子大角度掠射下,IDT71256中检测到 了同一事件多位翻转(SEMU)。同时预示了两种Hitachi大容量SRAM在地球同步轨道和两条太 阳同步轨道发生SMU的频度。     

SRAM型FPGA单粒子翻转效应加固方法

应用重离子加速器和皮秒脉冲激光器开展Virtex-Ⅱ FPGA（Field Programmable Gate Array）单粒子效应加固方法有效性研究.实验结果表明,同时应用三模冗余和动态刷新加固方法能够完全纠正单粒子效应产生的功能错误.实验获得数据加密算法在不同单粒子效应加固方法下功能错误截面,发现少量的存储位翻转就可以导致程序功能错误;程序功能对存储位翻转较敏感.分析Virtex-Ⅱ FPGA不同加固方法在不同卫星轨道的有效性,同时应用动态刷新和三模冗余加固方法,可以完全校正由于存储位翻转造成的功能错误.重离子加速器和脉冲激光器实验结果同时表明,脉冲激光可以模拟重离子加速器研究单粒子效应加固方法有效性.     

Chromosome instability of HPRT-mutant subclones induced by ionising radiation of various LET.

The induction of HPRT-mutations and survival of Chinese hamster cells (line B11ii-FAF28, clone 431) were studied after irradiation by 4He and 12C-ions of various LET (20-360 keV/micrometers), produced by the U-200 heavy ion accelerator. The RBE increases with LET up to the maximum at 100-200 keV/micrometers and then decreases. Cytogenetic analysis was performed on the HPRT-mutant subclones selected from unirradiated Chinese hamster V-79 cells and from HPRT-mutant subclones that arose after exposure to gamma-rays, 1 GeV protons and 14N-ions (LET-77 keV/micrometers), produced by the synchrophasotron and the U-400M heavy ion accelerator. Slow growing mutant subclones were observed. The cytogenetic properties of individual clones were highly heterogeneous and chromosome instability was observed in both spontaneous and radiation-induced mutants. Chromosome instability was highest among spontaneous mutants and decreased with increasing LET.     

RBE: mechanisms inferred from cytogenetics.

Cyclotron-accelerated heavy ion beams provide a fine degree of control over the physical parameters of radiation. Cytogenetics affords a view into the irradiated cell at the resolution of chromosomes. Combined they form a powerful means to probe the mechanisms of RBE. Cytogenetic studies with high energy heavy ion beams reveal three LET-dependent trends for 1) level of initial damage, 2) distribution of damage among cells, and 3) lesion severity. The number of initial breaks per unit dose increases from a low-LET plateau to a peak at approximately 180 keV/micrometer and declines thereafter. Overdispersion of breaks is significant above approximately 100 keV/micrometer. Lesion severity, indicated by the level of chromosomal fragments that have not restituted even after long repair times, increases with LET. Similar studies with very low energy 238Pu alpha particles (120 keV/micrometer) reveal higher levels of initial breakage per unit dose, fewer residual fragments and a higher level of misrepair when compared to high energy heavy ions at the same LET. These observations would suggest that track structure is an important factor in genetic damage in addition to LET.     

Biological effects of heavy ions from the standpoint of target theory.

The biological effect of heavy ions is best described through the action cross section, as a function of the end-point of interest and the charge and speed of the ion. In track theory this is called the "ion-kill" cross section, for it is the effect produced by a single heavy ion and its delta rays. As with nuclear emulsions the biological track structure passes from the grain count regime to the track width regime to the thindown region with an increase in LET. With biological cells, as with any detector capable of storing sublethal damage, with low LET irradiation the action cross section (in the ion-kill mode) is increasingly obscured by the effect of "gamma-kill", by the influence of overlapping delta rays from neighboring heavy ions. Thus at low LET response is dominated by the gamma-kill mode, so that the RBE approaches 1. The theory requires 4 radiosensitivity parameters for biological detectors, extracted from survival curves at several high LET bombardments passing through the grain count regime, and at high doses. Once these are known the systematic response of biological detectors to all high LET bombardments can be unfolded separating ion kill from gamma kill, predicting the response to a mixed radiation environment, and predicting low dose response even at the level of a single heavy ion. Cell killing parameters are now available for a variety of cell lines. Newly added is a set of parameters for cell transformation.     

Analysis of secondary electron emission spectra of equal-LET protons and alpha particles for purposes of radiation quality and spaceflight hazard assessment.

Amongst the great variety of heavy particles present in the galactic and solar cosmic ray spectra, hydrogen and helium nuclei are significantly more abundant than all other heavier ions and, as such, represent a major radiation hazard to humans in space. Experimental data have suggested that differences in relative biological effectiveness (RBE) exist between the two species at the same value of linear energy transfer (LET). This has consequences for heavily ionising radiation protection procedures, which currently still assume a simple dependence of radiation quality on LET. By analysing the secondary electron (delta-ray) emission spectra of protons and alpha particles, in terms of the spatial characteristics of energy deposition in cellular targets and the likelihood of complex lesion formation, a numerical quantity representing biological effectiveness is generated. When expressed relative to a reference radiation, this quantity is found to differ for protons and a particles of the same LET, demonstrating not only the ion-specific nature of RBE but also the inadequacy of specifying radiation quality as a function of LET only. Such a method for numerically assessing radiation quality may have implications for procedures for heavy ion protection in space at low doses and for understanding the initial mechanisms of radiation action.     

Induction of chromosome aberrations in mammalian cells after heavy ion exposure.

The induction of chromosome aberrations by heavy charged particles was studied in V79 Chinese hamster cells over a wide range of energies (3-100 MeV/u) and LET (20-16000 keV/micrometer). For comparison, X-ray experiments were performed. Our data indicate quantitative and qualitative differences in the response of cells to particle and x-ray irradiation. For the same level of cell survival the amount of damaged cells which can be observed is smaller in heavy ion (11.4 MeV/u Ar) irradiated samples. The highest yield of damaged cells is found 8 to 12 hours after particle irradiation and 4 hours after x-irradiation. Differences in the amount of damaged cells are attributed to cell cycle perturbations which interfere with the expression of damage. After heavy ion exposure the amount of cells reaching mitosis (mitotic index) decreases drastically and not all damaged cells reach mitosis within 48 hours after exposure. A portion of cells die in interphase. Cell cycle delays induced by x-ray irradiation are less pronounced and all cells reach the first post-irradiation mitosis within 24 hours after irradiation. Additionally, the damage produced by charged particles seems to be more severe. The disintegration of chromosomes was only observed after high LET radiation: an indication of the high and local energy deposition in the particle track. Only cross sections for the induction of chromosome aberrations in mitotic cells were reported in this paper because of the problems arising from the drastic cell cycle perturbations. In this case, cells were irradiated in mitosis and assayed immediately.