| Residual Stress Measurement for Ion-implanted NiTi Alloy by Using Moiré Interferometry and Hole-drilling Combined Method |
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| 作者单位： | WANG Qianga，b，WANG Biaoa，c，*，MA De-caia，DAI Fu-longd aSchool of Astronautics，Harbin Institute of Technology，Harbin 150001，China bCollege of Physical Science and Technology，Heilongjiang University，Harbin 150080，China cState Key Laboratory of Optoelectronic Materials and Technologies，Institute of Optoelectronic and Functional Composite Materi-als，and School of Physics Science and Engineering，Sun Yat-sen University，Guangzhou 510275，China dDepartment of Engineering Mechanics，Tsinghua University，Beijing 100084，China |
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| 基金项目： | National Natural Science Foundation of China (10572155) |
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| 摘 要： | Residual stresses in ion-implanted NiTi alloy are measured by a combined method of Moiré interferometry and hole-drilling. Oxy-gen ions are implanted into the NiTi alloy under a voltage of 30 kV by a dose of 1.0×1017 ions/cm2 for one hour. Subsequently, in order to avoid dimensional error, a hole is drilled exactly in the center of the sample. The distribution of residual stresses around the hole is measured. It is indicated that the method which combines the Moiré interferometry with hole-drilling is able to be used to measure resid-ual stresses produced by ion implantation.
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| 关 键 词： | ion implantation residual stress Moiré interferometry hole-drilling |
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