| SRAM单粒子效应检测方法研究 |
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| 引用本文： | 罗 磊,张大宇,于庆奎.SRAM单粒子效应检测方法研究[J].航天器环境工程,2010,27(5):585-589. |
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| 作者姓名： | 罗 磊 张大宇 于庆奎 |
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| 作者单位： | 1.中国空间技术研究院 电子元器件可靠性中心，北京 100029 |
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| 摘 要： | 采用中国科学院近代物理研究所的回旋加速器HIRFL产生不同LET值的重离子，以模拟空间辐射环境，检测了两种国产SRAM器件抗单粒子翻转和单粒子锁定的能力。试验中采用了两套单粒子效应检测系统，结合试验检测过程和最终结果，讨论了两套检测系统各自的优缺点，总结了试验中需要注意的其他问题。本研究为今后构建其他器件的单粒子效应检测系统提供了参考。
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| 关 键 词： | 静态随机存储器 检测系统 辐射效应 单粒子效应 虚拟仪器 |
| 收稿时间： | 2010/4/13 0:00:00 |
The detection methods for SRAM single event effects |
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| Luo Lei,Zhang Dayu and Yu Qingkui.The detection methods for SRAM single event effects[J].Spacecraft Environment Engineering,2010,27(5):585-589. |
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| Authors: | Luo Lei Zhang Dayu and Yu Qingkui |
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| Institution: | 1.Electronic Components Reliability Center, China Academy of Space Technology, Beijing 100029, China |
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| Abstract: | SRAM single-event effects are studied in this paper by using heavy ion research facility in Lanzhou (HIRFL) at the Institute of Modern Physics, Chinese Academy of Sciences. Two kinds of SRAMs made in China were tested. The structure and the principle of two detection systems are described in detail. By analyzing the test results, the advantages and drawbacks of these two systems are compared. Related problems are discussed. The designs of SRAM single event effect detection systems can provide a guide for other electronic components’ single event effect detection systems. |
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| Keywords: | SRAM detection system radiation effect single event effect LabView |
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