Investigation of thermosolutally caused convection during Bridgman-growth of BiSbTe3-mixed crystals at normal and reduced gravity |
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| Institution: | 1. Air Force Institute of Technology, Warsaw, Poland;2. Institute of Aviation, Warsaw, Poland;3. Polish Air Force Academy, Dęblin, Poland;1. Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur Campus, PO: BCKV Campus Main Office, Mohanpur – 741252, Nadia, West Bengal, India;2. Fakultät Physik, Technische Universität Dortmund, D-44221 Dortmund, Germany;3. Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005, India;4. The Institute for Quantum Matter, Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, MD 21218, USA;5. I. Physikalisches Institut, Georg-August-Universitat, D-37073 Göttingen, Germany;6. Experimental Physics VI, Center for Electronic Correlations and Magnetism, University of Augsburg, 86159 Augsburg, Germany;1. I.K. Gujral Punjab Technical University, Kapurthala, Punjab, India;2. Beant College of Engineering & Technology, Gurdaspur, Punjab, India;3. Department of Physics, Shri Mata Vaishno Devi University, Katra 182320, Jammu and Kashmir, India;4. Department of Physics, G.N.D.U., Amritsar, Punjab, India;5. Centre For Materials Science and Engg., NIT Hamirpur, 177005 Himachal Pradesh, India;6. Swami Premanand Mahavidyalaya, Mukerian 144211, Punjab, India;1. Hanoi National University of Education, Hanoi, Vietnam;2. Viet Nam Education Publishing House, Hanoi, Vietnam;3. Hanoi Pedagogical University No2, Vinhphuc, Vietnam;4. Duy Tan University, K7/25 Quang Trung, Danang, Vietnam;5. Hong Duc University, Thanhhoa, Vietnam;6. Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang, Vietnam;7. VNU University of Science, Hanoi, Vietnam;1. Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019, Tunisia;2. CNRS, UMI 2958 Georgia Tech-CNRS, 57070 Metz, France;3. Université de Lorraine, Centrale Supelec, LMOPS, EA4423, 57070 Metz, France |
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| Abstract: | BiSbTe3-mixed crystals have been grown at normal and reduced gravity (during the MIR'97-mission) using a Bridgman-configuration of the TITUS facility. The distribution of the components in the melt, and so the homogeneity of the growing crystal, is strongly influenced by the flow in the melt even in the case of weak convection. The flow configuration in the melt especially in front of the solid-liquid phase boundary can be investigated by means of a segregation analysis of the system components and an additional Pb-dopant. The BiSbTe3-system is because of its hydro-dynamic properties a typical representative of semiconductor melts (low Prandtl number, high Schmidt number) but there are also some special properties relating to the segregationally caused enrichment of the lighter tellurium at the phase boundary and the resulting solutal destabilities. Experimental experiences from segregation analysis have shown that the mass transport in the melt at normal gravity is mainly influenced by convective mixing determined by thermally and solutally caused buoyancy forces. Numerical simulations have been performed for the real experimentally used configurations. These simulations have shown that a strong coupling of thermal and solutal effects exists and have given axial as well as radial segregation profiles being in excellent agreement with the experimental results for the vertical normal gravity grown crystals. For micro gravity conditions a reduction of the flow velocity of more than two orders of magnitude (depending on the micro gravity level and the direction of the residual acceleration) resulting in diffusion controlled component segregation has been predicted.The results of the two micro gravity grown crystals, especially the axial and radial segregation profiles as a sensitive indicator for the flow configuration in front of the phase boundary will be given and discussed in the paper. They will be compared with the results of numerical simulations of the melt flow for the real processing parameters measured during the TITUS growth processes and with experimental as well as numerical results for vertical normal gravity grown reference Samples. |
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