| Preparation and Microstructure of Highly - Oriented LaNiO3 Thin Films by RF Sputtering Method |
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| 引用本文： | CHENG Xing-hua QIAO Liang BI Xiao-fang. Preparation and Microstructure of Highly - Oriented LaNiO3 Thin Films by RF Sputtering Method[J]. 中国航空学报, 2006, 19(B12): 142-145 |
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| 作者姓名： | CHENG Xing-hua QIAO Liang BI Xiao-fang |
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| 作者单位： | School of Materials Science and Engineering, BeO＇ing University of Aeronautics and Astronautics, Beijing 100083, China |
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| 摘 要： | In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 （BTO） ferroelectric thin films, highly （100）-oriented LaNiO3 （LNO） thin films of different thicknesses were deposited directly on Si （100） substrate with radio-frequency （RF） magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the microstructures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly （100）-oriented LNO thin films were obtained at the substrate temperature of 600℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth.
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| 关 键 词： | LaNiO3薄膜 晶体取向 射频溅射法 制备 显微结构 |
| 收稿时间： | 2006-08-10 |
| 修稿时间： | 2006-11-06 |
Preparation and Microstructure of Highly - Oriented LaNiO3 Thin Films by RF Sputtering Method |
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| Abstract: | |
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| Keywords: | LaNiO3 film perovskite orientation risistivity |
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