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几种256Kbit SRAM芯片的单粒子翻转规律
引用本文:隋厚堂. 几种256Kbit SRAM芯片的单粒子翻转规律[J]. 中国空间科学技术, 1999, 19(1): 56-62
作者姓名:隋厚堂
作者单位:中国科学院空间科学与应用研究中心
摘    要:给出了实践4号(SJ-4)星载IDT71256D高速CMOS静态存储器和HM8832异步静态存储器单粒子事件(SEU)的总翻转率,器件类型翻转率,逻辑状态翻转率,并与国外某些卫星的监测结果进行了比较。另外对部分SEU数据进行了统计分析,给出了SEU的片上地址和到达时间差的分布规律及拟合曲线。

关 键 词:半导体存储器  SEU率  统计分析  指数分布  

Some 256Kbit SRAM Single Event Upset Rates and Distributions
Sui Houtang. Some 256Kbit SRAM Single Event Upset Rates and Distributions[J]. Chinese Space Science and Technology, 1999, 19(1): 56-62
Authors:Sui Houtang
Abstract:In this paper,using Single Event Upset (SEU) data collected by high speed static RAM IDT71256D and asynchronous static RAM HM8832 of SEU Monitor on board SJ 4 spacecraft,the total upset rate,the device type and the logic upset rates are obtained and compared with other space experiment results.In addition,the SEU distribution histograms and fit exponential decay curves for the differences of SEU address on chip and arrive time are given by statistic analysis based on portion of SEU data,and finally the conclusions are given.
Keywords:Semiconductor memory SEU Rate Statistical analysis Exponential function  
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