三维打印结合化学气相渗透制备Si3N4-SiC复相陶瓷 |
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引用本文: | 封立运,殷小玮,李向明. 三维打印结合化学气相渗透制备Si3N4-SiC复相陶瓷[J]. 航空制造技术, 2012, 0(4): 62-65 |
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作者姓名: | 封立运 殷小玮 李向明 |
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作者单位: | 西北工业大学超高温结构复合材料国家重点实验室 |
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基金项目: | 西北工业大学凝固技术国家重点实验室自主研究课题(No.KB200920)资助项目 |
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摘 要: | 采用三维打印(3DP)技术成型Si3N4多孔陶瓷并结合化学气相渗透(CVI)SiC制备了Si3N4-SiC复相陶瓷。研究了烧结工艺对3DPSi3N4陶瓷线收缩率和孔隙率的影响。结果表明,3DPSi3N4坯体经热解除碳后再烧结,可以获得较小的线收缩率(<6%)及较大的气孔率(77.5%)。对其进行CVISiC近尺寸强化,研究了Si3N4-SiC复相陶瓷的抗弯强度随SiC体积分数的变化规律。
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关 键 词: | 三维打印 CVI Si3N4 SiC |
Si3N4-SiC Composite Ceramic Prepared by Three Dimensional Printing and Chemical Vapor Infiltration |
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Abstract: | Porous Si3N4 ceramics are formed by three-dimensional printing, SiC is subsequently introduced into the porous Si3N4 for consolidation by chemical vapor infiltration, thus Si3N4-SiC composite ceramics is formed. The influence of sintering process on the linear shrinkages and porosity of the 3DP Si3N4 is investigated. The sintered Si3N4 ceramics gets the smaller linear shrinkages (<6%), and bigger porosity (77.5%) after pyrolysis. Consolidation by CVI is made to these samples without changing their dimensions, the variation of the bending strength of the Si3N4-SiC composite with the volume fraction of CVI SiC is investigated. |
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Keywords: | Three-dimensional printing Chemical vapor infiltration Si3N4 SiC |
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