二次包封CMOS器件电子辐照实验研究

对CMOS器件54HCT00进行了复合材料的二次包封，研制了试验电路板，在器件加电工作下进行电子辐照试验的动态测试．结果表明，二次封装的器件抗总剂量的能力提高了1—2个数量级，得到了预期的数据和结果．这些工作为商用器件的空间开拓使用提供了很好的途径．

EXPERIMENTAL STUDY OF CMOS DEVICE OF SECONDARY PACKAGE WITH ELECTRON IRRADIATION

Natural space radiation such as that found in the Van Allen belts (electrons and protons) inflicts ionizing dose damage on semiconductor devices. This damage degrades the performance of many types of semiconductor. Consequently, the life of important military and commercial missions is shortened. A simple and direct way to lengthen the life of semiconductor is to shield them against the energetic radiation particle environment. Electrons and protons can be shielded effectively, while energetic heavy ions and gamma radiation are difficult to shield. The secondary package technique of compositing material of 54HCT00 CMOS device is adopted and experimental circuit of device is designed in this paper. Devices on bias are irradiated by electron source and results are obtained with the help of measurement on line. The level of ionizing dose is increased by 1-2 order of magnitude using secondary package. The anticipated data and results are achieved. An approach is provided to exploit space application for commercial semiconductor device.