掺杂纳米硅薄膜的生长特性

采用等离子增强化学气相沉积(PECVD)方法成功的沉积出掺杂(主要是磷、硼)纳米硅薄膜.探讨了各种生长工艺条件对掺杂纳米硅薄膜的结构与性能的影响及其规律.利用高分辨电镜(HREM)、Raman散射等手段对掺入不同杂质后的纳米硅薄膜的微结构进行初步研究,并从实验和理论上对掺杂纳米硅薄膜的生长特性进行了探讨.得出掺杂纳米硅薄膜具有与掺杂非晶硅薄膜和掺杂微晶硅薄膜不同的生长特性,即杂质原子绝大部分是非活性的,只有很少一部分在薄膜中起施主作用.大部分非活性的杂质原子存在于晶粒间界.

Structure Characteristics of Phosphorus-Doped Hydrogenated Nano-Crystalline Silicon Films

B-and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) were generated by plasma enhanced chemical vapor deposition (PECVD). Effects of technique parameters on the microstructure and physical properties of the films were examined. The microstructure of the nc-Si:H films were studied by means of high resolution electron microscopy (HREM) and Raman scattering. The growth characteristics of doped nc-Si:H films were discussed based on theory and experiments. It was conclude that both the growth and the doping mechanism of doped nc-Si:H films are different form those of μc-Si:H and a-Si:H. In the growing process of nc-Si:H films, most of the inclusion atoms are inactive and present at grain boundarics.