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Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction
作者姓名:YANG Fan  BI Xiao-fang* School of Materials Science and Engineering  Beijing University of Aeronautics and Astronautics  Beijing  China
作者单位:YANG Fan,BI Xiao-fang* School of Materials Science and Engineering,Beijing University of Aeronautics and Astronautics,100083 Beijing,China
摘    要:The effects of the thickness of MgO and Fe on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction was studied using the first principle method. Two series of models with MgO of different thicknesses: Fe(3)MgO(t)Fe(3) (t=1,3,5,7) and with Fe of varied thicknesses: Fe(t)MgO(3)Fe(t) (t=3,4,5,6,7) were established. Calculated results show that in all the models the magnetic moment of Fe increases at the Fe/MgO interface and surface as compared with that of the inner layers. The mag-netic moment of each Fe layer was found to be independent of MgO thicknesses, while the spin-polarization of Fe layer at the interface shows a slight change in function of the MgO thicknesses. The tunneling magnetoresistance (TMR) ratio estimated by the Julliere model has the same change tendency as the spin-polarization has, and the largest value is obtained at the MgO thickness of 5 atomic layers. When the Fe thickness increases, the spin-polarization of interface Fe layer follows up an increase with a decrease. The highest TMR value is achieved when the Fe thickness is of 4 atomic layers.


Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction
YANG Fan,BI Xiao-fang* School of Materials Science and Engineering,Beijing University of Aeronautics and Astronautics, Beijing,China.Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction[J].Chinese Journal of Aeronautics,2006,19(Z1).
Authors:YANG Fan  BI Xiao-fang
Abstract:The effects of the thickness of MgO and Fe on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction was studied using the first principle method. Two series of models with MgO of different thicknesses: Fe(3)MgO(t)Fe(3) (t=1,3,5,7) and with Fe of varied thicknesses: Fe(t)MgO(3)Fe(t) (t=3,4,5,6,7) were established. Calculated results show that in all the models the magnetic moment of Fe increases at the Fe/MgO interface and surface as compared with that of the inner layers. The magnetic moment of each Fe layer was found to be independent of MgO thicknesses, while the spin-polarization of Fe layer at the interface shows a slight change in function of the MgO thicknesses. The tunneling magnetoresistance (TMR) ratio estimated by the Julliere model has the same change tendency as the spin-polarization has, and the largest value is obtained at the MgO thickness of 5 atomic layers. When the Fe thickness increases, the spin-polarization of interface Fe layer follows up an increase with a decrease. The highest TMR value is achieved when the Fe thickness is of 4 atomic layers.
Keywords:Fe/MgO/Fe  electronic structure  tunnel magnetoresistance  thicknesses
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