|
|||||
|
|
Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films |
|
| Authors: | Wang Wenwen Wang Tianmin |
| Institution: | Center of Material Physics and Chemistry, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China |
| Abstract: | Transparent conductive oxide (TCO) thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen (AO) resisting systems in spacecrafts. Of TCO, ZnO:Al (ZAO) and In2O3:Sn (ITO) thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive at most 21.7%. |
| Keywords: | transparent conductive oxide thin film ZnO:Al In2O3:Sn atomic oxygen erosion electrical properties Thin Films Oxide Conductive Transparent Irradiation Atomic Oxygen erosion effects surface influences morphology electrical properties irradiation measurement dependence structure scanning electron microscopy characterized diffraction |
| 本文献已被 CNKI 维普 万方数据 ScienceDirect 等数据库收录！ | |