AlGaN/GaN HEMT质子辐射效应研究进展

氮化镓（GaN）基异质结材料以其宽禁带、耐高温、高击穿电压以及优异的抗辐射性能成为航天领域半导体材料的研究和应用热点。而基于GaN材料的AlGaN/GaN高电子迁移率晶体管（HEMT）因其制备过程带来的缺陷和损伤，性能将受到空间辐射的严峻挑战。文章对空间辐射环境下AlGaN/GaN HEMT的辐射机理和效应进行梳理；针对低中地球轨道以质子为主的辐射环境，对不同能量和注量的质子辐照对AlGaN/GaN HEMT的效应进行系统分析。鉴于从压电极化角度分析AlGaN/GaN HEMT的质子辐射效应存在欠缺，且不同能量和注量的质子辐照对器件的影响不同，提出后续应开展AlGaN/GaN HEMT辐射损伤机制、不同轨道辐射环境模拟以及质子辐照对AlGaN/GaN HEMT宏观特性影响研究。

Review of proton irradiation effect to AlGaN/GaN HEMT

The heterostructure material based on gallium nitride (GaN) has become a research hotspot in the field of semiconductor materials for aerospace applications, owing to its advantages of wide band gap, high temperature resistance, high breakdown voltage, and excellent radiation resistance, In particular, the AlGaN/GaN high electron mobility transistor (HEMT) based on the GaN material is severely challenged for its performance against the space radiation, due to defects and damage resulted in the preparation process . This paper firstly analyzes the space radiation mechanism and the radiation effects on the AlGaN/GaN HEMT. Then, recognizing that the LEO and MEO irradiation environments mainly consist of protons, the effects of the proton irradiation of different energies and fluences on the AlGaN/GaN HEMT are discussed. In view of the lack of piezoelectric polarization perspective for analyzing the proton irradiation effect on the AlGaN/GaN HEMT, and the fact that the space protons of different energies and fluences have different effects, some suggestions for next research focuses are put forward.