首页 | 本学科首页   官方微博 | 高级检索  
     

离子注入铜薄膜后的氧化行为
引用本文:王晓震,王二敏,赵新清. 离子注入铜薄膜后的氧化行为[J]. 航空材料学报, 1999, 0(4)
作者姓名:王晓震  王二敏  赵新清
作者单位:北京航空材料研究院!北京100095
摘    要:为克服铜易氧化造成薄膜电阻增加、机械性能下降的缺点,采用离子注入技术对铜薄膜表面进行改性研究。离子注入后进行了氧化试验,并结合X射线衍射和卢瑟福背散射进行了分析。结果表明,离子注入对原有薄膜的电阻影响是很小的; 随注入剂量的增大,抗氧化能力提高;离子注入不但改善了铜薄膜的抗氧化能力,而且氧化行为及氧化层的结构也发生了变化,未经注入的铜薄膜形成的氧化铜以Cu2O为主,注入后氧化铜则为Cu2O 和CuO 的复合结构。离子注入提高了铜薄膜抗氧化性能。

关 键 词:离子注入  氧化    

Oxidation behavior of copper thin films by ion implantation
WANG Xiao zhen WANG Er min ZHAO Xin qing. Oxidation behavior of copper thin films by ion implantation[J]. Journal of Aeronautical Materials, 1999, 0(4)
Authors:WANG Xiao zhen WANG Er min ZHAO Xin qing
Abstract:In order to inhibit the oxidation induced rising in resistance and degradation of mechanical performance of copper thin films, ion implantation was employed for modification of the copper thin film surface. X ray diffraction and Rutherford Back Scattering techniques were adopted to investigate and analyze the oxidation characteristics of the films. It is indicated that ion implantation has insignificant effect on the rising in electrical resistance. In addition, the oxidation resistance increase with the increasing in dose of ion implantation. It was observed that the oxidation behavior of copper thin films was changed due to the ion implantation. After implantation, the oxide consists of Cu 2O and CuO, instead Cu 2O prior to implantation.
Keywords:ion implantation  oxidation  copper  chromium
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号