| Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins |
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| 作者姓名： | DING Wen-ge YU Wei ZHANG Jiang-yong HAN Li FU Guang-sheng |
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| 作者单位： | College of Physics Science and Technology, Hebei University, Baoding 071002, China |
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| 基金项目： | Natural Foundation of Hebei province, China （GE2004000119） |
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| 摘 要： | The hydrogenated amorphous silicon nitride （SiNx） thin films embedded with nano-structural silicon were prepared and the micro- structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.
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| 关 键 词： | 氢化非晶态氮化硅薄膜 硅纳米颗粒 界面 无序 缺陷 |
| 收稿时间： | 2006-08-10 |
| 修稿时间： | 2006-11-06 |
Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins |
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| DING Wen-ge YU Wei ZHANG Jiang-yong HAN Li FU Guang-sheng.Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins[J].Chinese Journal of Aeronautics,2006,19(B12):173-178. |
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| Abstract: | |
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| Keywords: | silicon nanostructures disorder and defect role of hydrogen |
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