MOS电容器单粒子介质击穿导致GaN功率放大器失效分析

为验证一款GaN功率放大器抗空间辐射效应能力，对其进行了重离子单粒子效应试验研究。被试样品是由GaN HEMT、MOS电容器和电感器等组成的混合电路。试验源为加速器产生的锗离子（Ge+13，能量205 MeV)，线性能量传输（LET）值为37.4 MeV·cm2/mg。试验结果是：GaN HEMT性能未出现变化；MOS电容器发生了介质击穿失效，造成功率放大器功能失效。经验公式计算的单粒子介质击穿电压，与重离子试验结果基本吻合，得出MOS电容器单粒子介质击穿导致GaN功率放大器失效。研究表明，混合电路中无源的MOS电容器也会发生单粒子介质击穿失效，应用于空间环境时应进行单粒子效应评估。

Failure analysis of GaN power amplifier due tosingle event dielectric rupture of MOS capacitor

To study the radiation tolerance of a certain type of GaN power amplifier, heavy ion irradiation experiments are carried out. The test device consists of a GaN HEMT, and several MOS capacitors and inductors. The heavy ions of 205 MeV Ge+13 with the LET value of 37.4 MeV·cm2/mg are used. The experimental results show that the performance of the GaN HEMT remains not changed, while the dielectric breakdown of the MOS capacitor results in the failure of the GaN power devices. The critical breakdown voltage of the MOS capacitors due to the single event dielectric rupture is calculated by an empirical formula, and the results are basically in agreement with the heavy ion test results. It is concluded that the failure of the GaN power amplifier is due to the single event dielectric rupture of the MOS capacitor. The results show that the MOS capacitors are sensitive to the single event dielectric breakdown and the single event effect should be considered for the MOS capacitors in hybrid in the space application.