| 空间用功率MOSFET器件2N7266总剂量 |
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| 引用本文： | 薛玉雄,曹 洲,郭祖佑,杨世宇,田 恺. 空间用功率MOSFET器件2N7266总剂量[J]. 航天器环境工程, 2008, 25(1): 10-14 |
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| 作者姓名： | 薛玉雄 曹 洲 郭祖佑 杨世宇 田 恺 |
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| 作者单位： | 兰州空间物理研究所真空低温技术与物理国家重点实验室,兰州,730000 |
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| 基金项目： | 国家863项目(2007AA04z431)资助课题 |
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| 摘 要： | 文章针对空间用功率MOSFET器件2N7266进行了60Co源γ射线辐射试验研究。在辐射过程中,采用JT-1型晶体管特性图示仪和计算机控制的摄像机实时监测器件电参数随辐射剂量变化的特征,通过试验研究获得了被试器件阈值电压、漏电流和击穿电压随总剂量变化的特征,得出了被试器件抗总剂量辐射的指标。研究结果可为被试器件在航天器型号的使用提供技术参考依据。
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| 关 键 词： | 辐射效应 功率MOSFET器件 总剂量 γ射线 |
| 文章编号： | 1673-1379(2008)01-0010-05 |
| 收稿时间： | 2007-08-14 |
| 修稿时间： | 2007-08-14 |
Total ionization dose test of power MOSFET 2N7266 device for space applications |
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| Xue Yuxiong,Cao Zhou,Guo Zuyou,Yang Shiyu and Tian Kai. Total ionization dose test of power MOSFET 2N7266 device for space applications[J]. Spacecraft Environment Engineering, 2008, 25(1): 10-14 |
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| Authors: | Xue Yuxiong Cao Zhou Guo Zuyou Yang Shiyu Tian Kai |
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| Affiliation: | Lanzhou Institute of Physics, National Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou 730000, China;Lanzhou Institute of Physics, National Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou 730000, China;Lanzhou Institute of Physics, National Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou 730000, China;Lanzhou Institute of Physics, National Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou 730000, China;Lanzhou Institute of Physics, National Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou 730000, China |
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| Abstract: | This paper investigates the total radiation dose effects on 4 pieces of military power MOSFET 2N7266 under 60Co y-radiation. During the y-radiation,the time history of the DUT's electrical characteristics along with the total radiation dose(TID) is obtained by using JT-1 transistor plotter and computer controlled vidicon. The DUT's threshold voltage,breakdown voltage and leakage current characteristics arc shown in tables and curves against the total radiation dose,from which the total radiation dose resistant capacity can be found for each individual device. The results may provide a reference for applications of 2N7266 MOSFET device in future engineering designs. |
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| Keywords: | radiation effect power MOSFET device total ionization dose y-radiation |
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