Influence of Microaccelerations on the Impurity Distribution in the InSb:Te Crystals Grown in Orbital Flights by the Method of Floating Zone Melting

The periodicity of the structure of impurity heterogeneities in the longitudinal section of an indium antimonide monocrystal doped by tellurium (InSb:Te) is investigated. The monocrystal was grown by the method of floating zone melting onboard the Foton-3 satellite. It is shown that the frequencies of harmonic components of heterogeneities converted into the time region coincide with frequencies of microaccelerations in the range 0–0.005 Hz arising onboard the Foton satellites. This fact confirms the hypothesis stated previously that residual microaccelerations onboard the satellite were the cause of occurrence of indicated periodicities.