低磁场量子化霍尔电阻样品发展综述

基于量子化霍尔效应建立电阻标准是当今前沿计量技术,是国际上定义电阻单位的最高标准,其核心部件是量子化霍尔电阻样品,传统砷化镓样品通常需要工作在10 T以上的强磁场环境中,磁体研制难度大,成本高,不易推广应用。随着量子电阻标准小型化、低成本化和国产化的发展,研制低磁场量子化霍尔电阻样品是发展趋势。介绍了砷化镓、石墨烯和铁磁拓扑材料三种低磁场量子电阻样品的原理,总结了研究现状和存在的问题,从磁场、温度、测量不确定度和技术成熟度等方面分析了三种方法的优势及不足,旨在为我国发展低磁场量子电阻标准提供理论基础。

Research Progress on Quantum Hall Resistance of Low Magnetic Field

The establishment of resistance standard based on Quantum Hall Effect (QHE) is a cutting-edge metrology technology,which is the highest standard to define the resistance in the world.The core component is Quantum Hall Resistance(QHR) which need 10 T in traditional GaAs QHR samples.The magnet will be difficult and expensive to made.With the development of QHR,it is urgent to find methods to develop QHR samples of low magnetic field.Three schemes for reproducing QHE under low magnetic field,including GaAs,graphene and ferromagnetic topological materials are introduced.The advantages and disadvantages of three schemes are analyzed from the dimensions of magnetic field,temperature,measurement uncertainty and technology maturity,to provide theoretical reference for the development of QHR in low magnetic field for China.