Diamond synthesis by high-gravity d.c. plasma cvd (hgcvd) with active control of the substrate temperature |
| |
| Affiliation: | 1. Electrotechnical Laboratory, Tsukuba, 305-8568, Japan;2. Dipartimento di Scienza dei Materiali ed Ingengeria Chimica, Politecnico di Torino, Torino, Italy;3. Department of System Design Engineering, Keio University, 223-8522 Yokohama, Japan;1. Faculty of Chemistry, Uzhhorod National University, Pidhirna Str. 46, Uzhhorod, 88000, Ukraine;2. Research Institute for Physics and Chemistry of Solid State, Uzhhorod National University, Pidhirna Str. 46, Uzhhorod, 88000, Ukraine;3. Faculty of Humanity and Natural Sciences, University of Prešov in Prešov, 17th November 1, Prešov, 08116, Slovak Republic |
| |
| Abstract: | In the first part of this paper, subatmospheric CVD methods for diamond thin film synthesis under normal gravity and other conditions are reviewed, following their increased capability for large-scale manufacturing. Emphasis is given to current problems and advances in moderate pressure d.c. plasma CVD operating under normal gravity and high-gravity. In the second part, an experimental technique aimed at solving the problem of temperature uniformity on the substrate surface at high gravity is presented. This technique improved temperature uniformity during diamond deposition at various gravity conditions and allowed a more accurate assessment of the influence of gravity on diamond growth and thin-film morphology. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
