Advanced thin-film materials processing in the ultra-vacuum of space |
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| Institution: | 1. Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy;2. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, I-20133 Milan, Italy;3. Infineon Technologies AG, Neubiberg 85579, Germany;1. Department of Mechanical Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan;2. Division of Mechanical and Space Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo, Hokkaido 060-8628, Japan;3. Department of Building Services Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong;4. Department of Aeronautics and Astronautics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;5. Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA |
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| Abstract: | The utilization of the vacuum of space for thin-film materials development has been pioneered by the Wake Shield Facility (WSF) program. The WSF is a 4 m diameter disc-shaped free-flying platform designed to generate an ultra-vacuum in low earth orbit (LEO) space, and to utilize that ultra-vacuum for the fabrication of thin-film materials by epitaxial growth. In the three flights of WSF, high-quality GaAs-based epitaxial thin films were grown, vacuum quality was assessed, and cooperative experiments were activated. The promising results on high-purity film growth indicate future benefits of thin-film materials fabrication in LEO for terrestrial applications in high-performance electronic devices. |
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