GaInP2外延膜中施主—受主对复合发光带的能量关量

通过变温与变激发强度的近红外光致发光研究了用ＭＯＣＶＤ方法、生长在ＧａＡｓ衬底上的Ｇａ０．５Ｉｎ０．５Ｐ（ＧａＩｎＰ２）外延薄膜的１．１７ｅＶ发射带的发光特性。１．１７ｅＶ发光带性质与０．９９ｅＶ及０．８５ｅＶ发光带的性质有着明显的差别。１．１７ｅＶ发光带的机理可用施主－受主对的复合发光来解释，其中施主－受主对系白处在Ｇａ格位上的Ｓｉ（ＳｉＧａ）及其最邻近的Ｇａ空位（ＶＧａ）所组成，记作ＳｉＧａ－ＶＧａ。考虑到ＧａＩｎＰ２中存在着很强的电子－格子耦合作用及其Ⅲ族子格子为部分有序，所以在施主－受主对复合发光中应计及Ｆｒａｎｃｋ－Ｃｏｎｄｏｎ位移△ＦＣ及该对在等效的部分有序势场中的相互作用能Ｅｓ（ＤＡＰ）。Ｘ—射线衍射实验表明，部分有序结构相当于成分调制，因而可用Ｋｒｏｎｉｇ－Ｐｅｎｎｅｙ模型来计算Ｅｓ（ＤＡＰ）值。这样，我们就导出了施主－受主对复合发光的新的能量表示式。

The Interrelated Energy As Expressed in the Donor-Acceptor Pair Recombination Luminescence in the GaInP_2 Epilayer

The 1. 17-eV photoluminescence emission present in Ga0.5In0.5 P layer grown on GaAs substrate by metal-organic chemical vapor deposition has been studied with respect to the changes of temperature and excitation intensity. The photolumihescence charac teristics of the 1. 17-eV emission are distinctly different compared with those of 0.99 and 0.85-eV emissions. The radiative mechahism of the 1. 17-eV emission is explained well by the recombination of the donor-acceptor Pair, comPOsed of carbon donor on gallium sublattice site and gallium vacancy accepter as the nearest neighbour. Considering theexistence of the ordered structure in Ga0.5In0.5P, the interaction energy E,(DAP) between the donor-accepter Pair and the potential field, induced by the ordered structure and Frank--Condon shift, should be taken iflto account in the donor-acceptor pair recombination photoluminescence. An x-ray diffraction experinlent shows that the ordered stature is equivalent to the compositional rnodulation, and it is possible to estimate the Es(DAP) value with a Kronig-Penney model. A new energy expression for the donor-acceptor pair recombination luminescence is deduced.