Convection and impurity distribution in crystal growth in low-gravity environments

Investigations conducted earlier by the authors have established that due to the steady-state field of body forces, convection is capable of giving rise to macroinhomogeneity in transverse impurity distribution in crystals. In the case of semiconductor materials the maximal value of this inhomogeneity is due to a weak convection in the melt, typical of low-gravity conditions. However, in addition to steady gravitational convection, other factors ignored previously, may also be employed in conducting experiments in low-g environments. The present paper discusses the results of theoretical studies of some factors influencing impurity distribution in the melt and the crystal.