旋转条件下切割SiC 单晶片实验研究

通过旋转条件下切割SiC单晶片,分析了切片表面微观形貌特点,研究了线锯速度、工件进给速度和工件转速对切片表面粗糙度与切向锯切力的影响规律。结果表明:增加工件旋转,切片表面平整光滑,沿线锯运动方向没有明显沟槽及凸起,质量明显得到改善;当转速由0增加到12 r/min时,切片表面粗糙度由1.532μm降到0.513μm;线锯速度和工件旋转速度增大、工件进给速度减小,切向锯切力减小,表面粗糙度减小。当线锯速度和工件旋转速度过大,切向锯切力和表面粗糙度反而会有所增加。

Experiment Research on Cutting SiC Wafer Under Workpiece Rotating

Through the experiments on cutting SiC wafer under the workpiece rotating,the surface microtopography ofslices was analyzed. The affecting laws including saw wire speed,workpiece feed speed and workpiece rotational speed onsurface roughness and tangential force of slice were studied. The results show that the wafer surface is flat and smooth andthere are no obvious bumps or grooves along the sawing direction due to additional rotation of the workpiece in this experiment condition. The surface roughness of slice reduces from Ra 1.532 m to Ra 0.513 m when the speed increases from 0r/ min to 12 r/ min. Thus the quality of slice surface is improved. The value of surface roughness and tangential force reduce
when wire saw speed and workpiece rotation speed increase and workpiece feed speed decreases. However, the value of surface roughness and tangential force will increase when wire saw speed and workpiece rotation speed excessively increase.