| 具有纳米结构的 VO2 相变薄膜 |
| |
| 引用本文： | 许念坎,尹大川,张晶宇,郑修麟. 具有纳米结构的 VO2 相变薄膜[J]. 航空学报, 1997, 18(5): 607-610 |
| |
| 作者姓名： | 许念坎 尹大川 张晶宇 郑修麟 |
| |
| 作者单位： | 西北工业大学材料科学与工程学院, 西安, 710072 |
| |
| 摘 要： | 采用无机溶胶-凝胶法制备VO2相变薄膜，该薄膜相变时的电阻（率）突变可达4～5个数量级。并用XRD,DSC和TGA法研究了制膜过程中干凝胶膜的层状非晶纳米结构。通过适当的非晶晶化过程及随后V2O5→VO2转变的真空热处理，可获得带有空洞（void）结构的低密度纳米薄膜，从而使电阻（率）突变特性异常优异。
|
| 关 键 词： | V2相变薄膜 纳米结构 无机溶胶-凝胶法 |
VO2 THIN FILMS WITH NANOSTRUCTURE |
| |
| Xu Niankan,Yin Dachuan,Zhang Jingyu,Zheng Xiulin. VO2 THIN FILMS WITH NANOSTRUCTURE[J]. Acta Aeronautica et Astronautica Sinica, 1997, 18(5): 607-610 |
| |
| Authors: | Xu Niankan Yin Dachuan Zhang Jingyu Zheng Xiulin |
| |
| Affiliation: | College of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an,710072 |
| |
| Abstract: | The VO2 thin films prepared by an inorganic sol gel method possess a sharp resistivity switching up to 4～5 orders of magnitude. In this paper, the amorphous nanostructural layer in the V2O5 dry gel films was studied by XRD, DSC and TGA. In the process of crystallization from the amorphous state and in the subsequent vacuum heat treatment procedure from V2O5 to V2, one can obtain low density nanostructural thin films with void structure, which was attributed to the high quality of resistivity jump at the phase transition. |
| |
| Keywords: | VO2thin films nanostructure inorganic sol-gel method |
|
| 点击此处可从《航空学报》浏览原始摘要信息 |
|
点击此处可从《航空学报》下载全文 |
|
