存储器抗辐射加固的矩阵纠错码研究

为了纠正辐射环境中的高能粒子对存储器造成的多位翻转，研究了一种矩阵纠错码电路，对存储器进行有效的抗辐射加固。提出了一种矩形循环校验法构造校验位，并设计了纠错码的译码算法和相应的译码电路。根据校验位构造了检测位。对数据的输入顺序进行排列，确保了冗余位发生翻转时纠错码电路仍可以正常工作。在16位宽的码字中，所研究的矩阵纠错码可以纠正数据宽度为5位的多位翻转。同目前已知的二维纠错码在相同条件下进行比较，其获得了更高的平均失效时间。

A study on matrix error correction code for memory hardening

In order to correct the multiple bit upsets (MBU) of high energy particles in the radiation environment, a matrix error correcting code circuit was proposed to strengthen the memory effectively. A method of rectangular cyclic parity was proposed to construct the parity bit, and the decode algorithm and the corresponding decoding circuit of correct code against MBU was proposed. The detection bit was constructed by parity bit. The order of the input of the data was arranged to ensure the error correcting code circuit worked normally when redundant bits flipped. In the 16 bit data,the proposed matrix error correct code can correct MBU with 5 bit data. Compared with the current known error correction codes in the same conditions, the matrix error correction codes are obtained with higher mean time to failure (MTTF).