| InxGa1-xAs材料在多结空间太阳电池中的应用进展 |
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| 引用本文： | 张炜楠,涂洁磊,胡凯,李雷,孙晓宇,姜德鹏,沈静曼.InxGa1-xAs材料在多结空间太阳电池中的应用进展[J].上海航天,2020,37(2):109-116. |
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| 作者姓名： | 张炜楠 涂洁磊 胡凯 李雷 孙晓宇 姜德鹏 沈静曼 |
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| 作者单位： | 云南师范大学 太阳能研究所，云南 昆明650500,云南师范大学 太阳能研究所，云南 昆明650500;云南师范大学 云南省农村能源工程重点实验室，云南 昆明650500,云南师范大学 太阳能研究所，云南 昆明650500,云南师范大学 太阳能研究所，云南 昆明650500,云南师范大学 太阳能研究所，云南 昆明650500,上海空间电源研究所，上海200245,上海空间电源研究所，上海200245 |
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| 基金项目： | 国家自然科学基金资助项目(61664010) |
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| 摘 要： | In_xGa_(1-x)As材料具有独特的物理特性,可以通过调节In和Ga的组分来改变材料的带隙宽度Eg。该材料自进入多结空间太阳电池领域以来,就受到了广泛的关注。因此,In_xGa_(1-x)As材料有望成为未来多结空间太阳电池领域中的重要研究对象。本文首先介绍了InGaAs材料的生长工艺及其在多结空间太阳电池领域中的应用情况和研究现状,同时讨论了材料的外延生长工艺以获得高质量含InGaAs材料的多结太阳电池。此外,介绍了近年来InGaAs材料在高效多结空间太阳电池领域的研究进展,并对其抗辐照性能进行了简述。大量研究表明:InGaAs材料的使用可以进一步提升多结空间太阳电池的光电转换效率,达到提升卫星有效载荷的目的。
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| 关 键 词： | InxGa1-xAs材料 多结空间太阳电池 外延生长工艺 抗辐照性能 |
| 收稿时间： | 2020/1/2 0:00:00 |
| 修稿时间： | 2020/3/9 0:00:00 |
Application Progress of InxGa1-xAs Materials in Multi-junction Space Solar Cells |
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| ZHANG Weinan,TU Jielei,HU Kai,LI Lei,SUN Xiaoyu,JIANG Depeng and SHEN Jingman.Application Progress of InxGa1-xAs Materials in Multi-junction Space Solar Cells[J].Aerospace Shanghai,2020,37(2):109-116. |
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| Authors: | ZHANG Weinan TU Jielei HU Kai LI Lei SUN Xiaoyu JIANG Depeng and SHEN Jingman |
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| Institution: | Solar Energy Research Institute, Yunnan Normal University, Kunming 650500, Yunnan, China,Solar Energy Research Institute, Yunnan Normal University, Kunming 650500, Yunnan, China;Yunnan Provincial Key Laboratory of Rural Energy Engineering, Yunnan Normal University, Kunming 650500, Yunnan, China,Solar Energy Research Institute, Yunnan Normal University, Kunming 650500, Yunnan, China,Solar Energy Research Institute, Yunnan Normal University, Kunming 650500, Yunnan, China,Solar Energy Research Institute, Yunnan Normal University, Kunming 650500, Yunnan, China,Shanghai Institute of Space Power?Sources, Shanghai 200245,China and Shanghai Institute of Space Power?Sources, Shanghai 200245,China |
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| Abstract: | InxGa1-xAs materials have unique physical properties. Their band gap width Eg can be changed by adjusting the compositions of In and Ga. Since the entrance into the field of multi-junction space solar cells, InxGa1-xAs materials have received extensive attentions. InxGa1-xAs materials are expected to be important research objects in the field of multi-junction space solar cells in the future. In this paper, the growth process of InGaAs materials and their application and research status in the field of multi-junction space solar cells are introduced in detail. Meanwhile, the epitaxial growth process of materials is discussed to obtain high-quality multi-junction solar cells containing InGaAs materials. In addition, the research progress of InGaAs materials in the field of efficient multi-junction space solar cells in recent years is introduced, and their performance of irradiation resistance is also briefly introduced. A large number of studies have shown that the use of InGaAs materials can further improve the photoelectric conversion efficiency of multi-junction space solar cells and achieve the purpose of improving satellite payloads. |
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| Keywords: | InxGa1-xAs material multi-junction space solar cell epitaxial growth process performance of irradiation resistance |
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