Preparation and Microstructure of Highly-Oriented LaNiO_3 Thin Films by RF Sputtering Method

In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 (BTO) ferroelectric thin films, highly (100)-oriented LaNiO3 (LNO) thin films of different thicknesses were deposited directly on Si (100) substrate with radio-frequency (RF) magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the micro-structures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly (100)-oriented LNO thin films were obtained at the substrate temperature of 600 ℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth.

Preparation and Microstructure of Highly - Oriented LaNiO3 Thin Films by RF Sputtering Method

In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 (BTO) ferroelectric thin films, highly (100)-oriented LaNiO3 (LNO) thin films of different thicknesses were deposited directly on Si (100) substrate with radio-frequency (RF) magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the microstructures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly (100)-oriented LNO thin films were obtained at the substrate temperature of 600 ℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth.