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CSCVI法制备C布增韧SiC基复合材料及其微观结构
引用本文:肖鹏,徐永东,黄伯云.CSCVI法制备C布增韧SiC基复合材料及其微观结构[J].航空材料学报,2001,21(4):33-37.
作者姓名:肖鹏  徐永东  黄伯云
作者单位:1. 中南大学
2. 西北工业大学
基金项目:国家自然科学基金项目 (5 9772 0 31)
摘    要:为了提高CVI法制备C/SiC复合材料的致密化速度 ,提出了连续同步CVI(CSCVI)法制备C布增韧SiC基复合材料的技术路线 ,制备了C/SiC复合材料 ,并观察了其微观结构。实验结果表明 ,在CSCVI工艺中 ,SiC基体沉积速度越快 ,材料的致密化程度越大且致密效果越好。同时 ,SiC基体沉积速度只由沉积温度与MTS(CH3 SiCl3 )流量控制 ,使工艺的可操作性增强 ,工艺参数可在较大范围内变动

关 键 词:CSCVI  CVI  C/SiC  微观结构  致密度
文章编号:1005-5053(2001)04-0033-05
修稿时间:2001年8月4日

Fabrication of SiC matrix composites reinforced by carbon cloth using CSCVI method and microstructure
XIAO Peng ,XU Yong dong ,HUANG Bai yun.Fabrication of SiC matrix composites reinforced by carbon cloth using CSCVI method and microstructure[J].Journal of Aeronautical Materials,2001,21(4):33-37.
Authors:XIAO Peng  XU Yong dong  HUANG Bai yun
Institution:XIAO Peng 1,XU Yong dong 2,HUANG Bai yun 1
Abstract:In order to increase the densification rate of C/SiC composites fabricated by CVI process, a continuous synchronous chemical vapor infiltration (CSCVI) technologic route for fabrication of C/SiC composites reinforced by carbon cloth was brought forward. C/SiC composites were fabricated, and their microstructure were observed and analyzed. The results indicate that, in CSCVI process, deposition rate of SiC matrix is faster, therefore the densification degree is greater and SiC solid is more uniform. At the same time, that deposition rate of SiC is controlled only by the deposition temperature and the MTS (CH 3SiCl 3) flux enhances the maneuverability of CSCVI process, and enlarges the variety range of processing parameters.
Keywords:CSCVI  CVI  C/SiC  microstructure  densification
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