纳米硅薄膜的氧化特性

将ｎｃ－Ｓｉ：Ｈ薄膜进行等离子和高温氧化处理，测量了样品的氢，氧含量，Ｒａｍａｎ谱，红外吸收谱，光致发光（ＰＬ），结果表明两种氧化方式都将氧掺入薄膜中，但不同处理方式氧在薄膜中的键合形式不同Ｒａｍａｎ谱表明氧化处理对薄膜中晶粒大小及晶态比没有影响，用晶粒－表面模型对氧化引起的光致发光（ＰＬ）蓝移进行了解释。     

GaInP2外延膜中施主—受主对复合发光带的能量关量

通过变温与变激发强度的近红外光致发光研究了用ＭＯＣＶＤ方法、生长在ＧａＡｓ衬底上的Ｇａ０．５Ｉｎ０．５Ｐ（ＧａＩｎＰ２）外延薄膜的１．１７ｅＶ发射带的发光特性。１．１７ｅＶ发光带性质与０．９９ｅＶ及０．８５ｅＶ发光带的性质有着明显的差别。１．１７ｅＶ发光带的机理可用施主－受主对的复合发光来解释，其中施主－受主对系白处在Ｇａ格位上的Ｓｉ（ＳｉＧａ）及其最邻近的Ｇａ空位（ＶＧａ）所组成，记作ＳｉＧａ－ＶＧａ。考虑到ＧａＩｎＰ２中存在着很强的电子－格子耦合作用及其Ⅲ族子格子为部分有序，所以在施主－受主对复合发光中应计及Ｆｒａｎｃｋ－Ｃｏｎｄｏｎ位移△ＦＣ及该对在等效的部分有序势场中的相互作用能Ｅｓ（ＤＡＰ）。Ｘ—射线衍射实验表明，部分有序结构相当于成分调制，因而可用Ｋｒｏｎｉｇ－Ｐｅｎｎｅｙ模型来计算Ｅｓ（ＤＡＰ）值。这样，我们就导出了施主－受主对复合发光的新的能量表示式。     

生长在Si上的GaAs外延膜中有关深能级缺陷与其形貌间的关联研究

由于在GaAs和Si单晶材料间有着很大的格子常数及线性热膨胀系数差别，所以在St上生长的GaAs异质外延薄膜（GaAs／Si）中会存在着界面失配形变与高密度的结构缺陷。我们的实验显示，GaAs／Si外延膜的无序与其生长条件有关，尤其与其［As］／［Ga］比密切相关。与GaAs／Si无序相关的失配位错、线位错及畴区的形貌已用扫描电子显微镜作了观察;与深能级相关的缺陷与其形貌间的关联也已用实验说明。对于高有序GaAs／Si外延膜来说，其与离域相关的主发光峰的强度对温度的变化服从阿兰纽斯方程，而对低有序的GaAs／Si外延膜来说，其与局域相关的主发光峰的强度对温度的变化关系则遵循对无定型半导体才成立的另一种方程。     

Preparation and Photoluminescence of ZnO Nanostructures

Porous anodic alumina (PAA) hosts with ZnO nanoparticles loaded in were prepared by immersing PAA films in an aqueous solu-tion of zinc acetate and then annealing at high temperatures. Highly ordered ZnO nanodot arrays were produced using the method in combination of PAA template with RF magnetron sputtering deposition. The photoluminescence of the ZnO/PAA composite and the highly ordered ZnO nanodot arrays were investigated by means of a fluorescent spectrometer. The ZnO/PAA composite exhibits intense and broad photoluminescence spectra with the peak position at around 485 nm. The ZnO nanodot arrays have a strong UV light emissive peak at about 380 nm and a wide light emissive peak at 460 nm-610 nm at the room temperature.     

纳米CeO2粉体的制备及其发光性能研究

以氨水和硝酸铈为反应原料,采用沉淀滴定法制备了纳米CeO2粉体,通过XRD、SEM、TEM等手段对其进行了结构表征和形貌分析;考察了不同溶剂、煅烧温度等对其颗粒尺寸的影响;应用荧光光谱法测试了其发光光谱,首次探讨了纳米CeO2粉体的发光性能。结果表明,前驱体经过300～700℃煅烧后可以得到颗粒尺寸为4-30nm的立方萤石结构CeO2晶体,其形貌接近于球形。在无水乙醇溶剂中得到的纳米CeO2颗粒分散较好,其颗粒尺寸随煅烧温度的升高而增大。纳米CeO2粉体具有良好的蓝光发光性能,在276nm的激发波长作用下,其发射光谱的最大峰值为473nm。     

Photoluminescence Properties of Nanocrystalline 3C-SiC Films

Nanocrystalline (nc) 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposi-tion (HW-PECVD) technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence (PL) character-istics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wave-length, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the ap-pearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films.     

砷化镓异质外延薄膜的近红外光致发光研究

本文通过在硅衬底上用ＭＯＣＶＤ方法生长的砷化镓外延薄膜的变激发强度的近红外光致发光，研究了在液氮温度下峰值为１．１３与１．０４ｅＶ两个发光带的发光特性。     

超长纳米悬臂氧化锌带的制备和光谱分析

通过化学气相沉积的方法制备了具有超长纳米悬臂的氧化锌带。纳米带平均宽度有200nm,厚50nm左右。单晶主干沿着[0110]方向生长到±（2110）和±（0001）面终止。所得的纳米悬臂通常是垂直于（0001）生长,且长度能够达到几十μm。文中讨论了超长氧化锌纳米带的生长机制,并对其室温发光谱进行分析。     

Scalable Preparation of SrTiO3 Submicro-wires from Layered Titanate Nanowires

SrTiO3 submicro-wires were prepared by the reaction of layered titanate nanowires with Sr(OH)2 powder in an autoclave. The wires were investigated using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), Ultra-violet visible (UV-vis), photoluminescence (PL) and Raman spectroscopy. The XRD measurement shows that the prepared SrTiO3 submicro-wires hardly have impurity phases. The SEM and TEM images demonstrate that the scalable wires, which need to be proc- essed at the reaction temperature of 180 ℃ for about 48 hours, are not composed of single crystals. The PL shows that the wire-like SrTiO3 has emission peaks at the wavelengths of 568 and 585 nm. Further, the Raman spectroscopy reveals structural changes in the products through different reaction time.     

掺铒纳米硅的选择激发光荧光研究

通过选择激发光荧光技术研究了生长在SiO2中的掺铒纳米硅（nc—Si：Er）的光学性质。当激发光光子能量高于1．519eV时,nc—Si：Er的室温光荧光谱上能够看到两个清晰的发光峰,一个来自nc—Si,峰值位置在1．39eV,标记为Enc-Si;另一个发光来自nc—Si附近的Er离子,峰值位置在0．81eV,标记为EEr,当激发光的光子能量为1．42eV时,尽管该能量高于Enc-Si和EEr的峰值能量,在nc—Si：Er的室温光荧光谱上既看不到Enc-Si的发光蜂,也看不到EEr的发光峰。研究发现,当激发光光子能量与Er离子的一些激发态能量共振时,来自Er离子的荧光峰（EEr）出现共振增强现象,同时来自nc—Si的荧光峰峰值强度则有一定程度的降低。结果表明,nc—Si：Er中的共振增强现象是由于共振激发增强了载流子从nc—Si向临近的Er离子传输过程。