终端短路涂层金属圆波导的电磁散射特性分析

本文用光学法与广义散射矩阵技术相结合的方法,根据波导在入射平面电磁波照射下所激励的波导模式,分析了终端短路金属圆波导的电磁散射特性。在此基础上,假设金属波导内壁涂层厚度τ远小于波导半径a,且波导入口段的涂层厚度从零线性增加至τ,运用微扰法求出终端短路涂层金属圆波导内各波导模的传播常数,从而获得涂层圆波导的电磁散射特性。通过计算机仿真,计算了终端短路涂层金属圆波导的雷达截面(RCS),并与相同条件下内壁无涂层金属圆波导的雷达截面进行比较,结果令人满意。     

普郎克定律的一个新推论

根据热辐射基本定律———普郎克定律,推导出了一个新的推论。即对于任意温度T的黑体辐射源,总存在一对应波长λδ,该波长对应的黑体单色辐射亮度对温度T的偏导数最大,且λδT =2 4 10 .3μm·K。这一结论对于单波长辐射温度计设计中探测器波段的选择有重要参考价值,根据此结论可以推出温度测量灵敏度最高的波长。     

Relativistic electron fluxes and dose rate variations during April–May 2010 geomagnetic disturbances in the R3DR data on ISS

Space radiation has been monitored successfully using the Radiation Risks Radiometer-Dosimeter (R3D) installed at the ESA EXPOSE-R (R3DR) facility outside of the Russian Zvezda module of the International Space Station (ISS) between March 2009 and January 2011. R3DR is a Liulin type spectrometer–dosimeter with a single Si PIN detector 2 cm² of area and 0.3 mm thick. The R3DR instrument accumulated about 2 million measurements of the absorbed dose rate and flux of 10 s resolution. The total external and internal shielding before the detector of R3DR device is 0.41 g cm⁻². The calculated stopping energy of normally incident particles to the detector is 0.78 MeV for electrons and 15.8 MeV for protons. After the Coronal Mass Ejection (CME) at 09:54 UTC on 3 April 2010, a shock was observed at the ACE spacecraft at 0756 UTC on 5 April, which led to a sudden impulse on Earth at 08:26 UTC. Nevertheless, while the magnetic substorms on 5 and 6 of April were moderate; the second largest in history of GOES fluence of electrons with energy >2 MeV was measured. The R3DR data show a relatively small amount of relativistic electrons on 5 April. The maximum dose rate of 2323 μGy day⁻¹ was reached on 7 April; by 9 April, a dose of 6600 μGy was accumulated. By the end of the period on 7 May 2010 a total dose of 11,587 μGy was absorbed. Our data were compared with AE-8 MIN, CRESS and ESA-SEE1 models using SPENVIS and with similar observations on American, Japanese and Russian satellites.     

金属热防护系统边缘热短路研究

研究了金属热防护系统(TPS)的缝隙辐射及支架两大热短路问题。通过数值计算分析了缝隙宽度和缝隙辐射率对热短路的影响,完成了整体样件以及阵列组合件的稳态传热实验测试,定量地研究了热短路的影响情况。实验结果显示:支架处热短路现象明显,实验中支架引发的热短路温差高达50K;在773K以下,缝隙传热引发的温升随着缝隙宽度的增加而线性增加;在773K以上,辐射热传导在缝隙宽度超过3mm时即成为内部传热的主导机制,这时缝隙传热引发的温升不再随宽度增加而线性递增。所提供的数值分析和实验方法可为金属热防护系统的分析与设计提供重要的参考价值。     

背景对目标红外辐射测量影响的实验研究

在排气引射红外抑制系统的实验研究中, 通过对目标背景的各种处理方法、实验对比及分析, 了解背景对目标红外辐射特性测量的影响规律。实验结果表明:在大背景小目标情况下, 必须十分注意对背景进行遮挡和冷却处理。在选择遮挡材料时, 如果被遮挡部位处于高温部件的直接辐射场中, 则应选用表面发射率高的板材, 否则应选用高反射板材。遮挡板的定向应使其板面垂线与探测器轴线有较大夹角。      

Full characterization of a compact 90Sr/90Y beta source for TID radiation testing

A new methodology for Total Ionizing Dose (TID) tests is proposed. It is based on the employment of an on-chip ⁹⁰Sr/⁹⁰Y beta source as alternative to standard methods such as ⁶⁰Co gamma rays and electrons from LINAC. The use of a compact beta source for TID tests has several advantages. In particular, the irradiation of devices with more than one radiation source results in a better representation of the complex space radiation environment composed of several types, energies and dose-rates. In addition, the use of an easy handling beta source allows the irradiation of electronic devices without any damage to other auxiliary circuit. In this work, ⁹⁰Sr/⁹⁰Y beta source dosimetry and related radiation field characteristics are discussed in depth.In order to validate the proposed source for TID tests, a rather complex device such as the “SPC56EL70L5” microcontroller from ST-Microelectronics was exposed to ⁹⁰Sr/⁹⁰Y beta rays. The results of this test were compared to that of a previous test of another sample from the same lot with a standard gamma ⁶⁰Co source. The electronic performances following the two irradiations have been found to be in excellent agreement, by demonstrating therefore the validity of the proposed beta source for TID tests.     

SRAM FPGA电离辐射效应试验研究

针对SRAM FPGA空间应用日益增多,以100万门SRAM FPGA为样品,进行了单粒子效应和电离总剂量效应辐照试验。单粒子试验结果是:试验用粒子最小LET为1.66 MeV·cm2/mg,出现SEU（单粒子翻转）;LET为4.17 MeV·cm2/mg,出现SEFI（单粒子功能中断）,通过重新配置,样品功能恢复正常;LET在1.66～64.8 MeV?cm2/mg范围内,未出现SEL（单粒子锁定）;试验发现,随SEU数量的累积,样品功耗电流会随之增加,对样品进行重新配置,电流恢复正常。电离总剂量辐照试验结果是:辐照总剂量75 krad(Si)时,2只样品功能正常,功耗电流未见明显变化。辐照到87 krad(Si)时,样品出现功能失效。试验表明SRAM FPGA属于SEU敏感的器件,且存在SEFI。SEU和SEFI会破坏器件功能,导致系统故障。空间应用SRAM FPGA必须进行抗单粒子加固设计,推荐的加固方法是三模冗余（TMR）配合定时重新配置（Scrubbing）。关键部位如控制系统慎用SRAM FPGA。     

多喷管火箭动力系统尾焰辐射特性可视化研究

为研究高空多喷管火箭动力系统尾焰辐射特性的可视化计算,采用耦合了Realizable k-ε湍流模型的三维N-S方程描述尾焰流动过程,化学反应速率采用湍流脉动机制和Arrhenius机制控制,采用PISO算法对多喷管动力系统尾焰流动过程进行求解,得到了尾焰流场的各项参数分布.在此基础上,运用气体辐射传输方程和SLG模型对不同方向观测面上接收到的尾焰辐射照度进行计算,得到尾焰在不同方向上的辐射特性分布,进而实现尾焰辐射特性的可视化计算.计算结果表明:高空助推器尾焰的辐射特性要明显强于芯级,其中喷管出口处尾焰的辐射特性最强,最容易被发现和识别;尾焰辐射特性的可视化计算可以有效捕捉到尾焰流场的结构,从而为尾焰的红外追踪与预警研究奠定基础.     

国产双极工艺线性电路低剂量率辐照效应评估方法

国产双极工艺元器件应用于航天型号存在低剂量率辐射损伤增强效应风险,需要对其开展低剂量率辐照试验评估。在0.01 rad(Si)/s低剂量率辐照条件下,测试分析了不同工艺器件对不同偏置条件的敏感性差异;对比0.1 rad(Si)/s辐照试验结果,分析了器件的低剂量率辐射损伤增强效应特性,建立了辐射损伤增强因子和参数判据法相结合的评价标准;依据此标准讨论了各型号器件的低剂量率辐射增强敏感度以及抗电离总剂量辐射的能力。