Reduction of satellite electromagnetic scattering by carbon nanostructured multilayers

We propose a low observable satellite covered by layered materials. The dielectric properties of the composite materials are analyzed using the coaxial air-line method. Our solution could result in cost-effective applications for satellite stealthness. The particle swarm optimization algorithm is used to design and optimize layered absorbers. The obtained reflection is below −20 dB in many frequency subranges, also under an oblique incident condition, within the band 2–18 GHz. The optimized layered absorbers are used as a cloak for cube satellites. In particular, we investigated a very simple geometry by using a finite element commercial software in the band from 2 to 18. Finally, the transmission through an aperture on the satellite surface is analyzed. It is highlighted that the optimized layered absorbers attenuate the electric field within the satellite, improving its immunity against electromagnetic interferences.     

银纳米结构的电化学制备及表面增强拉曼效应

利用电化学沉积的方法在氧化铟锡(ITO,Indium Tin Oxide)导电玻璃表面成功地制备出了形貌均一的银纳米结构.所制备银纳米结构的形貌和密度与前驱体AgNO₃的浓度、沉晶种电位、生长电位以及柠檬酸钠的加入均有着重要的关系,只有合理地设置这些参数才能制得形貌和密度均较为理想的银纳米粒子.此外以对巯基苯胺(p-ATP,p-aminothiophenol)为探针分子,在633 nm的激光激发下对银纳米结构进行了表面增强拉曼效应(SERS,Surface Enhanced Raman Scattering)的研究,结果表明其在SERS领域有着潜在的应用价值.     

Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

Hydrogenated nanocrystalline silicon carbide （SIC） thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition （HW-PECVD） technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy （AFM）, the Fourier transform infrared absorption （FTIR） and the transmission electron microscopy （TEM）. The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC （approximately 5.4 nm）, and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.     

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

The hydrogenated amorphous silicon nitride （SiNx） thin films embedded with nano-structural silicon were prepared and the micro- structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.     

Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the heli-con wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared ab-sorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmis-sion electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.     

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the micro-structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hy-drogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.