掺磷纳米硅薄膜的微结构

采用喇曼(Raman)散射谱、高分辨率电子显微镜(HRTEM)和原子力显微镜(AFM)对掺磷纳米硅薄膜的微结构进行了分析,并对纳米硅薄膜的传导机制进行了探讨.结果表明:掺磷纳米硅薄膜由尺寸为2～4*#nm的晶粒和2～3个原子层厚的非晶界面构成,计算得到薄膜的晶态比为40%～55%.与本征纳米硅薄膜相比,掺磷纳米硅薄膜晶粒尺寸和晶态比没有明显变化,电导率却提高了2个数量级.随着掺磷浓度增加,纳米硅薄膜的晶粒尺寸、晶态比及电导率逐渐增大.AFM观察表明掺磷纳米硅薄膜由尺寸介于15～20*#nm的团簇构成,团簇排列具有带状特征.     

Study on the Microstructure and Dielectric Properties of Barium Strontium Titanate Thin Films Prepared by Sol-gel Method

Sr05Ba0.5-xBixTiO3 （BST） thin films were fabricated on a Pt/SiO2/Si substrate by the sol-gel method. Then follows an investigation of the influeoces of bismuth （Bi） on the microstructures and the dielectric properties of Sr0.5Ba0.5-xBixTiO3 （BST） thin films. The microstructures of the BST thin films were examined by the XRD and the TEM techniques. Tetragonal perovskite crystal grains were observed in BST thin films. Increasing Bi^3＋ doping ration in BST will lead to decrease of the grain size. It is found that Bi^3＋ doping decreases the dielectric loss and improves the frequency dispersion of the BST thin films. Not only is compressed the peak of temperature-dependence of dielectric constant of Bi^3＋-doped BST thin films but also moves into the low-temperature region. Moreover, the average Curie tem- perature decreases gradually with the Bi^3＋ contents increasing.     

离子镀Ti(N,C)耐磨镀层成分与性能研究

 用空心阴极离子镀技术,在常用的不锈钢(1Cr18Ni9Ti)基材上,镀制Ti(N,C)耐磨镀层。对镀层的成分进行了分析,讨论了镀层成分的耐磨性,显微硬度和附着力的影响。通过对Ti(N,C)镀层与TiN和TiC镀层性能的对比,肯定了Ti(N,C)复合化合物镀层具有更优越的耐磨性和附着力。     

制备工艺对金刚石形核质量的影响

研究了制备工艺对微波等离子体ＣＶＤ金刚石成膜质量的影响。详细讨论了基片在等离子体中的位置、基片台结构、Ｎ２等离子体预处理及启动条件对金刚石成膜均匀性的影响。提出了能获得均匀金刚石膜的制备工艺程序。     

BH新型憎水剂及其憎水膜层“三防腐蚀”性能研究

研究了BH系列(BH 102和BH 103)憎水剂的合成工艺、技术指标、憎水处理成膜工艺以及憎水膜层的憎水效果和耐腐蚀性能。结果表明,BH系列憎水剂的憎水效果良好,在零件表面形成的憎水膜层能达到105°以上的憎水角;同时经BH系列憎水剂处理后的钢铁磷化表面的耐腐蚀性能得到明显改善,具有优良的"三防腐蚀"性能,其中含有复配缓蚀剂的BH 103憎水膜层的耐腐蚀性更优于添加单一缓蚀剂的BH 102憎水膜层。     

热控涂层电子辐照效应

研究防静电Kapton二次表面镜(ITO/Kapton/Al)、S781白漆两种典型热控涂层,在不同能量电子辐照后太阳吸收比退化情况,并利用X射线光电子能谱和扫描电子显微镜对样品表面的成分和形貌进行了分析。结果表明:相同电子注量下,不同能量电子对样品的太阳吸收比退化作用程度是有区别的。而样品光谱反射率、表面形貌、表面成分的损伤效应类似,说明不同能量电子辐照下,样品的退化机理是一致的。     

离子束辅助沉积WS_2-Ti-Ag复合薄膜的摩擦性能

采用ZDH-100型号离子束复合沉积设备沉积WS_2-Ti-Ag复合薄膜,基材为轴承钢和单晶硅(100).采用场发射扫描电子显微镜、XRD衍射仪,检测复合薄膜的表面形貌、微观结构.采用球-盘式摩擦磨损试验机,对复合薄膜在大气环境中的摩擦性能进行了研究.结果表明:采用离子束辅助沉积技术制备的WS_2-Ti-Ag复合薄膜是非晶态薄膜;并且随法向载荷的增加,复合薄膜的摩擦因数减小,摩擦状态越稳定,耐磨寿命越短.     

具有纳米结构的 VO_2 相变薄膜

采用无机溶胶－凝胶法制备ＶＯ２相变薄膜，该薄膜相变时的电阻（率）突变可达４～５个数量级。并用ＸＲＤ，ＤＳＣ和ＴＧＡ法研究了制膜过程中干凝胶膜的层状非晶纳米结构。通过适当的非晶晶化过程及随后Ｖ２Ｏ５→ＶＯ２转变的真空热处理，可获得带有空洞（ｖｏｉｄ）结构的低密度纳米薄膜，从而使电阻（率）突变特性异常优异     

过滤式阴极电弧沉积类金刚石薄膜工艺研究

研究了过滤式阴极电弧沉积系统的稳弧工艺参数,通过正交试验获得最佳稳弧参数。并且研究了弯管内置挡板对宏观粒子过滤效果的影响。采用喇曼光谱研究了偏压对生成的类金刚石薄膜性能的影响,证明－１００Ｖ偏压下获得的类金刚石薄膜有最佳的ＳＰ３含量。扫描电镜测试表明,在（１１１）硅基片上获得致密的膜,但在高速钢基体上沉膜堆积现象比较严重,不易获得优质类金刚石膜。同时也给出了类金刚石的原子力显微照片（ＡＦＭ）,表明稳弧参数对类金刚石薄膜表面形貌有较大的影响。     

Preparation,Growth Mechanisms and Characterizations of ZnSe Films via the Solvothermal Method

With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate surface treatment on the quality and morpholo-gies of the ZnSe films were investigated. The growth mechanism of ZnSe films was proved to be a layer-nucleation growth process, which was tied in with the Stranski-Krastanov (SK) model. ZnSe films were identified by the X-ray diffraction pattern (XRD), the scan-ning electron microscope (SEM), the X-ray photoelectron spectroscope (XPS) and the photoluminescence (PL) techniques. The results indicate that the modified solvothermal method with diethylamine as a solvent is suitable to prepare high quality ZnSe films.