DC Characteristics of Gamma-ray Irradiated SiGe HBT in Comparison with Si BJT

The changes of DC characteristics of SiGe HBT after being submitted to γ-ray irradiation of 700 krad, 7 000 krad and 10 000 krad were compared to those of Si BJT. Generally speaking, Ib and Ib–Ib0 increase with the doses increasing. For SiGe HBT, with the doses increasing, Ic and Ic–Ic0 as well as the related changes of the current gain (β) will decrease at higher Vbe, while for Si BJT, with the doses increasing, after irradiation, Ib and Ic–Ic0 increase; β and its related changes also decrease with their differences, however, tending to be very small at high doses of 7 000 krad and 10 000 krad. Moreover, given the same doses, the decreases of β are much larger than SiGe HBT, which shows that SiGe HBT’s anti-radiation performance proves to be better than Si BJT. Still, in SiGe HBT, some strange phe-nomena were observed: Ic–Ic0 will increase after the radiation of 7 000 krad in less than 0.65 V and as will β in less than 0.75 V. The mechanism of radiation-induced change in DC characteristics was also discussed.     

DC Characteristics of Gamma-ray Irradiated SiGe HBT in Comparison with Si BJT

The changes of DC characteristics of SiGe HBT after being submitted to γ-ray irradiation of 700 krad, 7 000 krad and 10 000 krad were compared to those of Si BJT. Generally speaking, Ib and Ib- Ib0 increase with the doses increasing. For SiGe HBT, with the doses increasing, Ic and Ic-Ic0 as well as the related changes of the current gain （β） will decrease at higher Vbe, while for Si BJT, with the doses increasing, after irradiation, Ib and Ic-Ic0 increase; ,8 and its related changes also decrease with their differences, however, tending to be very small at high doses of 7 000 krad and 10 000 krad. Moreover, given the same doses, the decreases of,a are much larger than SiGe HBT, which shows that SiGe HBT＇s anti-radiation performance proves to be better than Si BJT. Still, in SiGe HBT, some strange phenomena were observed： Ic-Ic0 will increase after the radiation of 7 000 krad in less than 0.65 V and as will ,8 in less than 0.75 V. The mechanism of radiation-induced change in DC characteristies was also discussed.     

工艺参数对单晶锗车削表面明暗扇形分布影响研究

单点金刚石车削单晶锗端面时,其表面可能呈现明暗扇形区域相间分布的现象,该现象的出现与工艺参数密切相关。通过分析材料特性对脆塑转变临界未变形切屑厚度的影响,指出明暗扇形现象出现的可能原因。结合正交实验,研究了主轴转速、切削深度、进给量对单晶锗表面明暗区域扇形分布的影响。将实验结果进行极差分析,分析各工艺参数对工件表面质量的影响规律,为下一步研究提供了参考。     

基于DBF的波束功率控制及优化设计技术

低轨卫星系统近年来得到了广泛的关注和发展,卫星的轨道高度低,具有传输延时短、路径损耗小的特点,可以为小型化用户终端提供服务,但也存在单星覆盖区内路径差异大、卫星业务分配不均和工作动态范围大的问题。针对这些问题提出了一种适用于低轨卫星的波束优化设计方法,采用地球匹配波束设计,来实现更好的链路质量和覆盖效率。在下行波束设计中,通过唯相位加权优化设计方法,在满足波束增益要求及波束间C/I的基础上,实现了单波束功率由0%～100%的调整能力。针对低轨卫星移动通信业务随时间变化,导致发射组件输出功率长时间工作于回退状态的特点,提出了一种通过卫星业务处理器实现业务量变化与功放的最佳效率供电电压匹配调整的星上自适应功放功率随动技术,使得功放平均效率有效提高,减少了天线的平均功耗和热耗。     

切削速度对单晶锗脆塑转变的影响

采用纳米压痕仪对单晶锗(100)(110)(111)晶面进行了纳米划痕实验,分析不同划痕速度对单晶锗不同晶面脆塑转变临界状态变化规律的影响,采用原子力显微镜对样品表面进行扫描观测。结果表明:划痕速度增加,单晶锗产生塑性去除的区域增大;但划痕速度过大,就会降低单晶锗产生塑性去除的区域。预测了在超精密切削加工中切削速度对单晶锗发生脆塑转变时的临界状态的影响规律,为实际超精密切削加工单晶锗零件提供数据支持。     

不同晶体取向单晶锗的力学性能

为了研究微纳米尺度下单晶锗的力学特性,采用纳米压痕仪对单晶锗(100)(110)和(111)晶面进行了纳米压痕实验,并通过原子力显微镜对材料表面进行了观测。根据单晶锗各晶面的位移-载荷曲线,对单晶锗各晶面的弹性回复率、硬度、弹性模量与压入深度之间的关系进行了分析。结果表明:单晶锗在加载过程中分别经历了弹性变形、塑性变形和脆性变形三个阶段。当压入深度超过500 nm时,加载曲线上有突进点产生;当压入深度超过100 nm时,卸载曲线上有突退点产生。单晶锗的残余压痕形貌表现为凸起状,表明单晶锗具有较低的加工硬化趋势。当压入深度达到100 nm时,单晶锗表现出明显的尺寸效应,且单晶锗(111)晶面具有最低硬度和弹性模量值。表明相对于其他两个晶面,单晶锗(111)晶面具有更好的塑性变形能力。     

大尺寸及异型锗窗高效电火花线切割技术

 研究了N型锗半导体电火花加工时所体现的单向导通性及特殊电特性,建立了电火花加工模型,分别用二极管、可变电阻、稳压管、电阻等器件表征了锗半导体与进电端材料的接触势垒、极间体电阻、介质放电维持电压及工作液电阻。设计了锗半导体电火花线切割专用夹具,采用锗半导体表面涂覆碳浆并用石墨块进电的方式以降低接触势垒、接触电阻,对进电接触点采用吹气方式减少电化学反应导致的不导电钝化膜的产生,保障加工的延续。最后对电阻率为22.3 Ω·cm,高度为170 mm的N型锗进行了电火花线切割,切割效率大于100 mm2/min,并采用数控的方法切割出异型锗窗。检测了放电波形,分析了锗半导体电火花线切割的特性。