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等离子喷涂Al_2O_3涂层的电击穿机理 总被引:1,自引:0,他引:1
采用大气等离子喷涂技术在铜基体上沉积了Al2O3涂层。采用XRD和SEM对涂层微观结构进行了表征。通过探讨孔隙率和吸潮行为对绝缘性能的影响,分析了等离子喷涂Al2O3涂层结构与电绝缘失效机理的关系。结果表明:等离子喷涂Al2O3涂层较致密,界面结合较好。随涂层厚度不同其孔隙率在5%~7%范围变化。等离子喷涂Al2O3涂层结构中的孔洞是电绝缘失效的主要部位且呈典型电晕击穿形貌。电晕击穿诱发的裂纹沿击穿方向扩展形成击穿隧道。击穿方向与电极极性无关而由击穿孔洞位置决定。涂层厚度与涂层击穿强度呈现倒数关系。吸潮会诱发导电通路形成降低Al2O3涂层抗击穿能力。 相似文献
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Podlesak T.F. Carter J.L. McMurray J.A. 《Aerospace and Electronic Systems Magazine, IEEE》1990,5(12):25-28
A high-voltage opening switch that uses gate-turnoff thyristors (GTOs) in series and successfully operates at voltages higher than the rated voltage of the individual devices has been demonstrated. The switch design and construction are described, and experimental results are given. The demonstration system is rated at 5 kV and uses 1-kV devices. A larger 24-kV system is under design and will use 4.5-kV devices. In order to design the 24-kV switch, the safe operating area of the large devices must be thoroughly known 相似文献
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