浸渍强化对氮化硅组织和性能的影响

浸渍强化处理是提高反应烧结氮化硅性能的有效措施。影响浸渍强化效果的主要因素有浸渍剂的品种;多孔坯体的结构特征:以及浸渍剂与氮化硅之间的润湿性能和相互作用关系等。本文通过系统性实验,确定了进行浸渍处理的最佳条件。     

P／M—SiC_p增强LY12的研究

 采用粉末冶金方法（Ｐ／Ｍ）完成了ＳｉＣ颗粒增强ＬＹ１２的成形工艺和不同重量百分比条件下的力学性能实验。测试表明,含ＳｉＣ＿ｐ２０％（ｗｔ）的复合材料在室温下平均抗拉强度可达５９４ＭＰａ,延伸率为６％。其抗拉强度比ＬＹ１２ＣＺ提高３０％；２００℃拉伸时σ＿ｂ＝４９３ＭＰａ；３１５℃时σ＿ｂ＝２９９ＭＰａ。用扫描电镜及光学显微镜观察了ＬＹ１２粉末和试样断口的组织形貌。     

不同粒径SiC对氟醚橡胶性能的影响

研究了不同粒径SiC对氟醚硫化胶力学性能,导热性能和摩擦磨损性能的影响.结果表明,随着SiC粒径的减小,橡胶100%定伸模量增大,拉伸强度提高;填充体积含量为15%的20nm SiC时橡胶的综合力学性能比较优异;大粒径SiC与基体间的界面热阻更小,比小粒径填料更能提高橡胶的导热性能;不同粒径的SiC以一定比例并用也可以提高橡胶的导热系数;SiC晶须能显著提高橡胶的摩擦磨损性能.     

单晶硅各向异性力学性能纳米压痕实验研究

应用纳米原位压痕仪对单晶硅(100),(110),(111)晶面进行纳米压痕实验,对材料的弹性模量和硬度进行考察。实验结果表明:单晶硅(111)晶面相对于其它两个晶面具有较小的弹性模量和硬度值。通过单晶硅不同晶面原子结构分析,认为晶面原子层的间距分布差异是各晶面弹性模量差异的主要原因。     

Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the heli-con wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared ab-sorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmis-sion electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.     

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the micro-structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hy-drogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.     

Design and Coupled Thermo-Mechanical Analysis of Silicon Carbide Primary Mirror Assembly

Based on the principle that the thermal expansion coefficient of the support structure should match that of the mirror, three schemes of primary mirror assembly were designed. Of them, the first is fused silica mirror plus 4J32 flexible support plus ZTC4 support back plate, the second K9 mirror plus 4J45 flexible support plus ZTC4 support back plate, and the third SiC mirror plus SiC rigid support back plate. A coupled thermo-mechanical analysis of the three primary mirror assemblies was made with finite element method. The results show that the SiC assembly is the best of all schemes in terms of their combination properties due to its elimination of the thermal expansion mismatch between the materials. The analytical results on the cryogenic property of the SiC primary mirror assembly show a higher surface finish of the SiC mirror even under the cryogenic condition.     

C形、中空截面碳化硅纤维的成形工艺研究

以聚碳硅烷(PCS)为原料，经C形喷丝板熔融纺丝制备C形、中空截面PCS原丝后，再经不熔化和高温烧成后得到C形、中空截面SiC纤维。文中讨论了纺丝温度、N2压力和收丝速度对两种PCS纤维当量直径和异形度的影响，以及不熔化和烧成工艺对SiC纤维截面形状的影响。结果表明，纺丝温度对C形、中空PCS纤维当量直径和异形度影响较大；合适的纺丝工艺和不熔化及烧成条件下可以得到高异形度低当量直径的C形、中空截面SiC纤维。     

热压辅助先驱体裂解制备的三维Cf／Si—O—C复合材料的微观结构与力学性能

采用聚硅氧烷(PSO)先驱体浸渍裂解工艺制备出碳纤维三维编织物增强Si—O—C复合材料(3D-B C_(?)/Si—O—C)。研究发现,第一周期采用热压辅助裂解可以显著提高材料的力学性能与致密度。第一周期经1600℃、10MPa的条件热压裂解处理5min后,材料的弯曲强度和断裂韧性从未处理前的246.2MPa和9.4MPa·m~(1/2)提高到502MPa和23.7MPa·m~(1/2)。该材料的弯曲强度在真空中可以保持到1400℃。探讨了工艺参数对材料结构与力学性能的影响。高温裂解弱化界面结合同时提高纤维就位强度以及加压提高材料致密度是热压辅助裂解能提高材料力学性能的主要原因。     

单晶硅超精密车削加工脆塑转变机理及临界切削厚度的研究

通过分析单晶硅的纳米印压试验结果以及显微压痕透射电镜观察结果,并结合尺度效应理论,提出了一种新的单晶硅超精密切削脆塑转变机理,建立了宏微结合的单晶硅超精密切削模型。首次基于理论分析的方法给出了较为精确的单晶硅脆塑转变的临界切削厚度,并通过试验对研究结果给予验证。