单晶硅超精密车削加工脆塑转变机理及临界切削厚度的研究

通过分析单晶硅的纳米印压试验结果以及显微压痕透射电镜观察结果,并结合尺度效应理论,提出了一种新的单晶硅超精密切削脆塑转变机理,建立了宏微结合的单晶硅超精密切削模型。首次基于理论分析的方法给出了较为精确的单晶硅脆塑转变的临界切削厚度,并通过试验对研究结果给予验证。     

Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the heli-con wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared ab-sorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmis-sion electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.     

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the micro-structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hy-drogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.     

Design and Coupled Thermo-Mechanical Analysis of Silicon Carbide Primary Mirror Assembly

Based on the principle that the thermal expansion coefficient of the support structure should match that of the mirror, three schemes of primary mirror assembly were designed. Of them, the first is fused silica mirror plus 4J32 flexible support plus ZTC4 support back plate, the second K9 mirror plus 4J45 flexible support plus ZTC4 support back plate, and the third SiC mirror plus SiC rigid support back plate. A coupled thermo-mechanical analysis of the three primary mirror assemblies was made with finite element method. The results show that the SiC assembly is the best of all schemes in terms of their combination properties due to its elimination of the thermal expansion mismatch between the materials. The analytical results on the cryogenic property of the SiC primary mirror assembly show a higher surface finish of the SiC mirror even under the cryogenic condition.     

碳化硅基直流固态断路器短路保护方法

碳化硅器件比硅器件具有更低的导通电阻,用其制作直流固态断路器可以大大降低其通态损耗,减轻散热压力。然而相比于硅器件,由于碳化硅器件管芯面积小,电流密度大,其短路能力相对较弱,短路保护要求更高。为确保碳化硅器件安全可靠工作,提高碳化硅基直流固态断路器的可靠性,对比分析了硅基与碳化硅基MOSFET的短路能力,揭示了其器件恶化机理,研究了栅源极电压箝位方法,并结合去饱和检测,提出了一种基于源极寄生电感的"软关断"短路保护方法,制作了直流固态断路器样机进行实验验证。实验结果表明,所提方法可以降低功率器件的关断电压应力、抑制短路电流,适合碳化硅基直流固态断路器短路保护。     

柔性接头用低模量硅橡胶配方及界面粘接技术研究

研究了硫化剂、增粘剂和补强填料等组分对一种低模量、低硬度和高强度的硅橡胶配方力学性能的影响规律,同时研究了一种胶粘剂配方来满足硅橡胶与金属钢界面粘接的工艺要求。该硅橡胶配方的剪切模量小于0.3MPa,与钢界面粘接的剪切强度大于2.5MPa,满足柔性接头部件的性能要求。     

硅氧氮陶瓷的先驱体法合成及性能的研究

用 Si Cl4为原料 ,通过水解和氨解的方法 ,制备了不同含氮量的硅氧氮先驱体。先驱体通过脱氨基原位聚合 ,再经过无机化转变成为成分均匀的硅氧氮粉体 ,用所得粉体热压烧结制备了硅氧氮材料。测试分析结果表明 ,氮的引入使氧化硅的析晶温度提高了 1 5 0℃ ;适量析晶显著提高材料的力学性能 ;烧结温度为 1 4 0 0℃时 ,氮的质量分数为 2 4 .3%材料的强度和韧性最大 ,分别达到 1 5 6 MPa和 1 .8MPa· m1 / 2 ,比 Si O2 基体的强度和韧性提高了 4 .5 8倍和 2 .2 5倍。     

浮栅型单电子存储器的等效电路模型

在介绍浮栅型硅量子点单电子存储器的结构与工作原理的基础上,通过分析建立了相应的集总电容电路模型,计算了存储器在线性、饱和、亚阈值情况下的电流。利用单电子器件的"阈值漂移"特性,可以得到纳米存储器在不同阈值电压下的存储状态。仿真表明,该模型可以准确地模拟存储器的"读"和"写"状态。     

探针游移对方形四探针测试仪测量硅片薄层电阻的影响分析

分析方形四探针探针游移对其测量微区薄层电阻的影响,完成了测试薄层电阻的公式的推导,对游移后产生的误差影响进行了统计数据分析,得出了测试结果满足测试误差要求的结论.     

C/SiC刹车材料的摩擦磨损性能

通过化学气相渗透结合反应熔体浸渗法制备了三维针刺C/SiC刹车材料,利用光学显微镜、SEM和XRD研究了材料的组织结构,并通过电模拟惯性试验台测试了全尺寸C/SiC飞机刹车盘的摩擦磨损性能。结果表明,C/SiC刹车材料由35%~65%C,25%~55%SiC和约10%Si组成,SiC和Si主要分布在短纤维胎网层。在刹车压力相同时,随着初始刹车速度的增大,材料的平均摩擦系数先增大后减小,当初始刹车速度为150 km/h时,摩擦系数达最大值;当初始刹车速度相同时,摩擦系数随着刹车压力的增大而减小;材料平均磨损率约为1.0×10-3mm/(side.time)。在飞机正常着陆条件下,材料的刹车力矩与刹车速度间的关系与飞机防滑刹车系统的着陆响应相匹配,使得该材料具有较高的刹车效率。