不同钝化工艺SiO2薄膜的辐射缺陷

为研究不同钝化工艺栅介质用SiO₂薄膜的高能电子辐射缺陷特征，采用能量为1 MeV的高能电子在辐照注量为1×10¹⁵ e/cm²、5×10¹⁵ e/cm²和1×10¹⁶e/cm²下对三种不同钝化工艺（I，700 nm SiN + 500 nm PSG;II，1.2 μm SiN;III，700 nm PSG + 500 nm SiN）的SiO₂薄膜进行了辐照试验。拉曼光谱和X射线光电子能谱结果表明I和III钝化工艺SiO₂薄膜形成了非晶硅及双氧根离子，傅立叶红外光谱结果表明I钝化工艺SiO₂薄膜形成缺陷结构未知的A₁、A₂、B₁及B₂缺陷；II钝化工艺SiO₂薄膜形成A₁、B₁、及 缺陷；III钝化工艺SiO₂薄膜形成A₁、及B₂缺陷。     

Effect of gap and overlap on mode Ⅱ interlaminar fracture toughness of automated fiber placement prepreg laminates

Automated Fiber Placement(AFP) technology facilitates the manufacturing process of composite structures with complex geometry owing to its high efficiency and accuracy.However,the unavoidable imperfections induced by the automated layup method bring challenges to the stability of the final mechanical properties of composites.The influence of AFP-induced gaps and overlaps on the mode Ⅱ interlaminar fracture process of oven-cured laminates is experimentally investigated and explicitly revealed.End...