Low sidelobe radar waveforms derived from orthogonal matrices

Novel waveforms are described that have low sidelobes when individual or multiple waveforms are approximately processed. They are related to orthogonal matrices that may be associated with complementary sequences and also with periodic waveforms having autocorrelation functions with constant zero-amplitude sidelobes. Also described are sets of sequences whose cross-correlation functions sum to zero everywhere. A potential application is the elimination of ambiguous range stationary clutter     

Convergence properties of Gram-Schmidt and SMI adaptive algorithms

The open-loop Gram-Schmidt (GS) canceler is shown to be numerically identical to the sampled matrix inversion (SMI) algorithm in the transient state if infinite numerical accuracy is assumed. Two forms of the GS canceler are discussed and analyzed: concurrent and nonconcurrent processing. Results for concurrent and nonconcurrent SMI cancelers have been obtained in the past by I.S. Reed, J.D. Mallet, and E. Brennan (see ibid., AES-10, p.853-63, 1974) under the assumption that the inputs are Gaussian. Many of those results are reproduced here using the GS structures as an analysis tool. In addition, new results are obtained when the input noises are not Gaussian. The deleterious effect of overmatching the degrees of freedom is discussed     

AlN/GaN HEMT毫米波器件结构仿真研究

为实现更高工作频率的氮化镓（gallium nitride,GaN）基高电子迁移率晶体管（high electron mobility transistor,HEMT）器件，采用薄势垒外延结构、缩小栅长对提升器件的截止频率十分重要。通过对不同氮化铝（aluminium nitride,AIN）势垒层厚度以及不同尺寸栅长的AlN/GaN HEMT进行仿真分析，系统研究不同结构对器件短沟道效应、直流及频率等特性的影响。首先固定栅长为100nm，研究了跨导与截止频率随AlN势垒层厚度的变化情况。跨导随势垒层厚度的增加先增大后减小。当势垒层厚度为4nm时，跨导达到最大值(592mS/mm)，截止频率也达到最大值。为尽可能提升器件的截止频率，同时避免器件出现短沟道效应，固定AlN势垒层厚度为4nm，研究器件截止频率与短沟道效应随器件栅长的变化情况。仿真表明器件截止频率随栅长的减小而增大，50nm栅长的器件截止频率最高，但栅长为50nm时器件短沟道效应严重，此时器件纵横比(Lg/Tbar)为12.5。因此需要提升器件的纵横比，当器件栅长达到100nm时(Lg/Tbar=25)，器件短沟道效应得到抑制，且具有较高的截止频率。仿真结果表明，AlN HEMT具有较高的截止频率，同时应采用较大的纵横比设计(纵横比为25左右)以抑制短沟道效应，为后续高频AlN/GaN HEMTs器件的制备提供了理论依据。