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Lillington D.R. Cavicchi B.T. Gillanders M.S. Crotty G.T. Krut D.D. 《Aerospace and Electronic Systems Magazine, IEEE》1990,5(1):25-29
Space silicon solar cell technology has matured to the extent that large-area planar silicon cells can be fabricated in sizes up to 8 cm×8 cm with efficiencies up to approximately 15%. In order to achieve substantially higher efficiencies, cells based on GaAs are required. It is shown that, subject to certain boundary conditions, the efficiency of GaAs/Ge cells can reach 24% when used in the dual-junction configuration or approximately 19.5% if the Ge substrate is passive. The electrooptical properties of these cells are reviewed, and prospects for achieving these efficiency goals are presented. Experimental performance data are given 相似文献
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